Transistors - JFETs

Category Introduction

Junction gate field-effect transistors (JFET) are devices used as electronically-controlled switches, amplifiers, or voltage-controlled resistors. A potential difference of the proper polarity applied between the gate and source terminals increases resistance to current flow, which means less current would flow in the channel between the source and drain terminals. JFETs do not need a biasing current due to a charge flowing through a semiconducting channel between source and drain terminals.

Product List

1076 Items

Mfr Part #	Quantity Available	UnitPrice	Series	Packaging	Product Status	FET Type	Voltage - Breakdown (V(BR)GSS)	Drain to Source Voltage (Vdss)	Current - Drain (Idss) @ Vds (Vgs=0)	Current Drain (Id) - Max	Voltage - Cutoff (VGS off) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Resistance - RDS(On)	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
SST175-T1-E3 MOSFET P-CH JFET 30V SOT23-3 Vishay Dale	60	$0.00		Tape & Reel (TR)	Obsolete	-	-	-	-	-	-	-	-	-	-	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236 (SOT-23)
2SK880-Y(TE85L,F) JFET N-CH 50V 0.1W USM Toshiba Semiconductor and Storage	196	$0.61		Tape & Reel (TR)	Active	N-Channel	50 V	-	1.2 mA @ 10 V	-	1.5 V @ 100 nA	13pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
CPH3910-TL-E JFET N-CH 25V 50MA 3CPH onsemi	749	$0.70		Tape & Reel (TR)	Active	N-Channel	25 V	25 V	20 mA @ 5 V	50 mA	1.8 V @ 100 µA	6pF @ 5V	-	400 mW	150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CPH
CMPF4393 TR PBFREE JFET N-CH 40V 50MA SOT23 Central Semiconductor Corp	884	$1.10		Tape & Reel (TR)	Active	N-Channel	40 V	40 V	5 mA @ 20 V	-	500 mV @ 1 nA	14pF @ 20V	100 Ohms	350 mW	-65°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23
J109 JFET N-CH 25V 625MW TO92 onsemi	301	$0.55		Bulk	Active	N-Channel	25 V	-	40 mA @ 15 V	-	2 V @ 10 nA	-	12 Ohms	625 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N4393 PBFREE JFET N-CH 40V 1.8W TO-18 Central Semiconductor Corp	50	$3.19		Bulk	Active	N-Channel	40 V	-	5 mA @ 20 V	-	500 mV @ 1 nA	14pF @ 20V	100 Ohms	1.8 W	-65°C ~ 175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
UJ3N120035K3S 1200V 35 MOHM SIC JFET, G3, N-ON UnitedSiC	18	$28.96		Tube	Active	N-Channel	1200 V	1200 V	-	63 A	-	2145pF @ 100V	45 mOhms	429 W	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
J111-D74Z JFET N-CH 35V 625MW TO92-3 onsemi	1,275	$0.44		Cut Tape (CT)	Active	N-Channel	35 V	-	20 mA @ 15 V	-	3 V @ 1 µA	-	30 Ohms	625 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
J112-D26Z JFET N-CH 35V 625MW TO92-3 onsemi	889	$0.45		Tape & Reel (TR)	Active	N-Channel	35 V	-	5 mA @ 15 V	-	1 V @ 1 µA	-	50 Ohms	625 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
2SK879-Y(TE85L,F) JFET N-CH 0.1W USM Toshiba Semiconductor and Storage	1,240	$0.44		Tape & Reel (TR)	Active	N-Channel	-	-	1.2 mA @ 10 V	-	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
2SK879-GR(TE85L,F) JFET N-CH 0.1W USM Toshiba Semiconductor and Storage	1,733	$0.43		Tape & Reel (TR)	Active	N-Channel	-	-	2.6 mA @ 10 V	-	400 mV @ 100 nA	8.2pF @ 10V	-	100 mW	125°C (TJ)	Surface Mount	SC-70, SOT-323	USM
J113-D74Z JFET N-CH 35V 625MW TO92 onsemi	1,306	$0.43		Cut Tape (CT)	Active	N-Channel	35 V	-	2 mA @ 15 V	-	500 mV @ 1 µA	-	100 Ohms	625 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
SMMBF4393LT1G JFET N-CH 30V 0.225W SOT23-3 onsemi	85	$0.56	Automotive, AEC-Q101	Tape & Reel (TR)	Active	N-Channel	30 V	30 V	30 mA @ 15 V	-	3 V @ 10 nA	14pF @ 15V (VGS)	100 Ohms	225 mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3 (TO-236)
J175-D26Z JFET P-CH 30V 0.35W TO92-3 onsemi	1,291	$0.56		Tape & Reel (TR)	Active	P-Channel	30 V	-	7 mA @ 15 V	-	3 V @ 10 nA	-	125 Ohms	350 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
NSVJ3910SB3T1G IC JFET N-CH 25V 50MA 3CPH onsemi	841	$0.62	Automotive, AEC-Q101	Tape & Reel (TR)	Active	N-Channel	25 V	25 V	20 mA @ 5 V	50 mA	600 mV @ 100 µA	6pF @ 5V	-	400 mW	-55°C ~ 150°C (TJ)	Surface Mount	TO-236-3, SC-59, SOT-23-3	3-CPH
J111 JFET N-CH 35V 625MW TO92-3 onsemi	1,386	$0.42		Bulk	Active	N-Channel	35 V	-	20 mA @ 15 V	-	3 V @ 1 µA	-	30 Ohms	625 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J113 JFET N-CH 35V 625MW TO92-3 onsemi	1,087	$0.43		Bulk	Active	N-Channel	35 V	-	2 mA @ 15 V	-	500 mV @ 1 µA	-	100 Ohms	625 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
J112 JFET N-CH 35V 625MW TO92 onsemi	1,492	$0.48		Bulk	Active	N-Channel	35 V	-	5 mA @ 15 V	-	1 V @ 1 µA	-	50 Ohms	625 mW	-55°C ~ 150°C (TJ)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
2N4392 PBFREE JFET N-CH 40V 1.8W TO-18 Central Semiconductor Corp	96	$3.09		Bulk	Active	N-Channel	40 V	-	25 mA @ 20 V	-	2 V @ 1 nA	14pF @ 20V	60 Ohms	1.8 W	-65°C ~ 175°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18
2N4858A JFET N-CH 40V 0.36W TO-18 Central Semiconductor Corp	38	$5.46		Bulk	Active	N-Channel	40 V	-	8 mA @ 15 V	-	800 mV @ 0.5 nA	10pF @ 10V (VGS)	60 Ohms	360 mW	-65°C ~ 200°C (TJ)	Through Hole	TO-206AA, TO-18-3 Metal Can	TO-18

About Junction Field Effect Transistors (JFETs)

What are Junction Field Effect Transistors (JFETs)?

Junction Field Effect Transistors (JFETs)

Junction Field Effect Transistors (JFETs) are a type of transistor that controls electrical current by using an electric field to modulate the conductivity of a semiconductor channel. Unlike bipolar junction transistors (BJTs), JFETs are voltage-controlled devices, meaning they require minimal input current to operate. The basic operating principle involves a gate terminal that regulates the flow of charge carriers through a channel between the source and drain terminals. When a voltage is applied to the gate, it creates an electric field that narrows or widens the channel, thus controlling the current flow. This makes JFETs ideal for applications requiring high input impedance and low noise levels.

Types of Junction Field Effect Transistors (JFETs)

N-Channel JFETs

N-Channel JFETs are characterized by a channel composed of n-type semiconductor material. They are typically used in applications where a negative gate-source voltage is applied to control the current flow. N-Channel JFETs are known for their high electron mobility, making them suitable for high-speed switching applications and amplifiers.

P-Channel JFETs

P-Channel JFETs, on the other hand, have a channel made of p-type semiconductor material. These devices require a positive gate-source voltage to control the current flow. P-Channel JFETs are often used in complementary circuits with N-Channel JFETs, providing flexibility in designing circuits that require both types of transistors for balanced performance.

How to choose Junction Field Effect Transistors (JFETs)?

When selecting a JFET, several key parameters should be considered:

Gate-Source Voltage (V_GS): Determines the voltage range within which the JFET operates effectively.
Drain-Source Current (I_DS): Indicates the maximum current the JFET can handle.
Transconductance (g_m): Measures the JFET's ability to amplify signals.
Input Capacitance: Affects the frequency response and speed of the JFET.

To evaluate product quality and reliability, consider suppliers with a proven track record and certifications. Environmental factors such as temperature range and humidity should also be considered, as they can impact the JFET's performance. Proper installation, including adequate heat dissipation and protection from electrostatic discharge, is crucial for maintaining the longevity and reliability of the device.

Applications of Junction Field Effect Transistors (JFETs)

Audio Amplification

In the audio industry, JFETs are prized for their low noise and high input impedance, making them ideal for preamplifiers and audio mixers. Their ability to handle small signal levels without introducing distortion is crucial for high-fidelity sound systems.

Telecommunications

JFETs are used in telecommunications for signal processing and amplification. Their high-frequency response and low power consumption make them suitable for RF amplifiers and oscillators in communication devices.

Instrumentation

In scientific and industrial instrumentation, JFETs are employed in sensor interfaces and measurement systems. Their precision and stability are essential for accurate data acquisition and signal conditioning.

Switching Applications

JFETs serve as efficient switches in various electronic circuits, including digital logic circuits and power management systems. Their fast switching speed and low on-resistance contribute to energy-efficient designs.

Automotive Electronics

In the automotive sector, JFETs are used in engine control units and sensor interfaces. Their robustness and ability to operate under harsh conditions make them suitable for automotive applications requiring reliability and durability.