Transistors - IGBTs - Single

Category Introduction

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Product List

4342 Items

PDF	Mfr Part #	Quantity Available	UnitPrice	RFQ	Series	Packaging	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	IGTH20N50 N CHANNEL IGBT FOR SWITCHING APP Harris Corporation	254	$2.51			Bulk	Active	-	500 V	20 A	-	-	-	-	Standard	-	-	-	-	-	Through Hole	TO-218-3 Isolated Tab, TO-218AC	TO-218 Isolated
	MGW12N120D TRANS IGBT CHIP N-CH 1.2KV 20A onsemi	349	$2.55			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP30E4DPE-00#J3 IGBT Renesas Electronics America Inc	43	$2.52			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP63G4DPE-00#J3 N CH IGBT Renesas Electronics America Inc	9	$2.56			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	HGTP10N40C1D 17.5A, 400V, N-CHANNEL IGBT Harris Corporation	158	$2.60			Bulk	Active	-	400 V	17.5 A	-	3.2V @ 20V, 17.5A	75 W	-	Standard	19 nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
	RJP6065DPN-P1#T2 IGBT Renesas Electronics America Inc	226	$2.63			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP3043DPK-80#T2 HIGH SPEED IGBT Renesas Electronics America Inc	295	$2.68			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP43F4ADPP-MB#T2F IGBT 430V, 40A FOR PLASMA TV Renesas Electronics America Inc	299	$2.70			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	HGT1S20N60B3S 40A, 600V, UFS N-CHANNEL IGBT Harris Corporation	153	$2.74			Bulk	Active	-	600 V	40 A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB
	AIGB30N65F5ATMA1 DISCRETE SWITCHES Infineon Technologies	144	$4.26			Tape & Reel (TR)	Active	NPT	650 V	30 A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-3-2
	AIGB30N65H5ATMA1 DISCRETE SWITCHES Infineon Technologies	210	$4.19			Tape & Reel (TR)	Active	NPT	650 V	30 A	-	-	-	-	Standard	-	-	-	-	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-3-2
	RJP30E3DPP-M0#T2 IGBT Renesas Electronics America Inc	200	$2.77			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	SGH15N120RUFDTU IGBT, 24A, 1200V, N-CHANNEL Fairchild Semiconductor	193	$2.81			Bulk	Active	-	1200 V	24 A	45 A	3V @ 15V, 15A	180 W	-	Standard	108 nC	20ns/60ns	600V, 15A, 20Ohm, 15V	100 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3, SC-65-3	TO-3P
	HGTP10N50E1D 17.5A, 500V, N-CHANNEL IGBT Harris Corporation	155	$2.88			Bulk	Active	-	500 V	17.5 A	-	3.2V @ 20V, 17.5A	75 W	-	Standard	19 nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
	HGTG27N60C3R 54A, 600V, RUGGED N-CHANNEL IGBT Harris Corporation	174	$2.85			Bulk	Active	-	600 V	54 A	108 A	2.2V @ 15V, 27A	208 W	-	Standard	212 nC	-	-	-	-40°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
	HGTG30N60B3 600 V, NPT IGBT Harris Corporation	171	$2.84			Tube	Obsolete	-	600 V	60 A	220 A	1.9V @ 15V, 30A	208 W	500µJ (on), 680µJ (off)	Standard	170 nC	36ns/137ns	480V, 30A, 3Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
	HGTP15N40C1 15A, 400V, N-CHANNEL IGBT Harris Corporation	295	$2.90			Bulk	Active	-	400 V	15 A	35 A	3.2V @ 20V, 35A	75 W	-	Standard	33 nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220
	MGY30N60D TRANS IGBT CHIP N-CH 600V 50A 3P onsemi	273	$2.94			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	HGTG2ON60C3DR 40A, 600V, RUGGED UFS SERIES N C Harris Corporation	178	$2.89			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	AUIRGB4062D1-INF IGBT, 59A I(C), 600V V(BR)CES, N Infineon Technologies	456	$0.00			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-