Transistors - IGBTs - Single

Category Introduction

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

Product List

4342 Items

PDF	Mfr Part #	Quantity Available	UnitPrice	RFQ	Series	Packaging	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	HGT1S3N60A4DS9A N-CHANNEL IGBT Fairchild Semiconductor	451	$1.62			Tube	Obsolete	-	600 V	17 A	40 A	2.7V @ 15V, 3A	70 W	37µJ (on), 25µJ (off)	Standard	21 nC	6ns/73ns	390V, 3A, 50Ohm, 15V	29 ns	-55°C ~ 150°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK (TO-263)
	HGTD10N50F1 10A, 500V N-CHANNEL IGBT Harris Corporation	519	$1.67			Bulk	Active	-	500 V	12 A	-	2.5V @ 10V, 5A	75 W	-	Standard	13.4 nC	-	-	-	-55°C ~ 150°C (TJ)	Through Hole	TO-251-3 Short Leads, IPak, TO-251AA	I-PAK
	RJP3082DPP-00#T2 HIGH SPEED IGBT Renesas Electronics America Inc	428	$1.66			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP3042DPP-00#T2 HIGH SPEED IGBT Renesas Electronics America Inc	454	$1.64			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP30L4DPE-00#J3 IGBT Renesas Electronics America Inc	19	$1.69			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP30Y2ADPP-MB#T2F IGBT Renesas Electronics America Inc	433	$1.67			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP30Y2ADPP-M9#T2F IGBT Renesas Electronics America Inc	439	$1.69			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP3053DPP-A9#T2F HIGH SPEED IGBT, 300V, 30A Renesas Electronics America Inc	330	$1.68			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP6055DPP-90#T2 IGBT 630V, 40A FOR PLASMA TV Renesas Electronics America Inc	552	$1.70			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJH30H1DPP-M1#T2 IGBT Renesas Electronics America Inc	492	$1.69			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP30H1DPP-M1#T2 IGBT Renesas Electronics America Inc	276	$1.70			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP30H1DPP-M9#T2 IGBT Renesas Electronics America Inc	210	$1.67			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP3045DPP-B1#T2F HIGH SPEED IGBT Renesas Electronics America Inc	323	$1.68			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	RJP30H1DPP-MZ#T2 IGBT Renesas Electronics America Inc	141	$1.70			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	SGW13N60UFDTM N-CHANNEL IGBT Fairchild Semiconductor	346	$1.68			Bulk	Obsolete	-	600 V	13 A	52 A	2.6V @ 15V, 6.5A	60 W	85µJ (on), 95µJ (off)	Standard	25 nC	20ns/70ns	300V, 6.5A, 50Ohm, 15V	55 ns	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK (TO-263)
	HGTG7N60A4D N-CHANNEL IGBT Harris Corporation	30	$1.72			Tube	Obsolete	-	600 V	34 A	56 A	2.7V @ 15V, 7A	125 W	55µJ (on), 60µJ (off)	Standard	37 nC	11ns/100ns	390V, 7A, 25Ohm, 15V	34 ns	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	TO-247
	HGTP20N35F3VL 20A, 350V, N-CHANNEL IGBT Harris Corporation	365	$1.76			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	HGTP20N35F3ULR3935 20A, 350V, N-CHANNEL IGBT Harris Corporation	473	$1.77			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
	SGW20N60HS IGBT, 36A, 600V, N-CHANNEL Infineon Technologies	76	$1.76			Bulk	Active	NPT	600 V	36 A	80 A	3.15V @ 15V, 20A	178 W	690µJ	Standard	100 nC	18ns/207ns	400V, 20A, 16Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-247-3	PG-TO247-3-1
	HGT1S20N60C3R 40A, 600V, RUGGED N-CHANNEL IGBT Harris Corporation	555	$1.77			Bulk	Active	-	600 V	40 A	80 A	2.2V @ 15V, 20A	164 W	-	Standard	116 nC	-	-	-	-40°C ~ 150°C (TJ)	Through Hole	TO-262-3 Long Leads, I²Pak, TO-262AA	I2PAK (TO-262)