Transistors - FETs, MOSFETs - Single

Category Introduction

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Product List

39097 Items
PDF Mfr Part # Quantity
Available
UnitPrice RFQ Series Packaging Product StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / Case
IRFD120PBF
IRFD120PBF
MOSFET N-CH 100V 1.3A 4DIP
Vishay Siliconix
297 $1.41
Tube ActiveN-ChannelMOSFET (Metal Oxide)100 V1.3A (Ta)10V270mOhm @ 780mA, 10V4V @ 250µA16 nC @ 10 V±20V360 pF @ 25 V-1.3W (Ta)-55°C ~ 175°C (TJ)Through Hole4-HVMDIP4-DIP (0.300", 7.62mm)
IRFD123PBF
IRFD123PBF
MOSFET N-CH 100V 1.3A 4DIP
Vishay Siliconix
403 $1.44
Tube ActiveN-ChannelMOSFET (Metal Oxide)100 V1.3A (Ta)10V270mOhm @ 780mA, 10V4V @ 250µA16 nC @ 10 V±20V360 pF @ 25 V-1.3W (Ta)-55°C ~ 175°C (TJ)Through Hole4-HVMDIP4-DIP (0.300", 7.62mm)
IRF1018EPBF
IRF1018EPBF
MOSFET N-CH 60V 79A TO220AB
Infineon Technologies
138 $1.43
HEXFET® Tube ActiveN-ChannelMOSFET (Metal Oxide)60 V79A (Tc)10V8.4mOhm @ 47A, 10V4V @ 100µA69 nC @ 10 V±20V2290 pF @ 50 V-110W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
IRFD014PBF
IRFD014PBF
MOSFET N-CH 60V 1.7A 4DIP
Vishay Siliconix
352 $1.41
Tube ActiveN-ChannelMOSFET (Metal Oxide)60 V1.7A (Ta)10V200mOhm @ 1A, 10V4V @ 250µA11 nC @ 10 V±20V310 pF @ 25 V-1.3W (Ta)-55°C ~ 175°C (TJ)Through Hole4-HVMDIP4-DIP (0.300", 7.62mm)
AOT9N50
AOT9N50
MOSFET N-CH 500V 9A TO220
Alpha & Omega Semiconductor Inc.
612 $1.46
Tube ActiveN-ChannelMOSFET (Metal Oxide)500 V9A (Tc)10V850mOhm @ 4.5A, 10V4.5V @ 250µA28 nC @ 10 V±30V1042 pF @ 25 V-192W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220TO-220-3
IRF820PBF
IRF820PBF
MOSFET N-CH 500V 2.5A TO220AB
Vishay Siliconix
247 $1.46
Tube ActiveN-ChannelMOSFET (Metal Oxide)500 V2.5A (Tc)10V3Ohm @ 1.5A, 10V4V @ 250µA24 nC @ 10 V±20V360 pF @ 25 V-50W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220ABTO-220-3
IRFR9120PBF
IRFR9120PBF
MOSFET P-CH 100V 5.6A DPAK
Vishay Siliconix
563 $1.46
Tube ActiveP-ChannelMOSFET (Metal Oxide)100 V5.6A (Tc)10V600mOhm @ 3.4A, 10V4V @ 250µA18 nC @ 10 V±20V390 pF @ 25 V-2.5W (Ta), 42W (Tc)-55°C ~ 150°C (TJ)Surface MountD-PakTO-252-3, DPak (2 Leads + Tab), SC-63
SPD08N50C3ATMA1
SPD08N50C3ATMA1
MOSFET N-CH 500V 7.6A TO252-3
Infineon Technologies
174 $2.56
CoolMOS™ Tape & Reel (TR) Not For New DesignsN-ChannelMOSFET (Metal Oxide)500 V7.6A (Tc)10V600mOhm @ 4.6A, 10V3.9V @ 350µA32 nC @ 10 V±20V750 pF @ 25 V-83W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TO252-3TO-252-3, DPak (2 Leads + Tab), SC-63
FQU2N100TU
FQU2N100TU
MOSFET N-CH 1000V 1.6A IPAK
onsemi
77 $1.48
QFET® Tube Last Time BuyN-ChannelMOSFET (Metal Oxide)1000 V1.6A (Tc)10V9Ohm @ 800mA, 10V5V @ 250µA15.5 nC @ 10 V±30V520 pF @ 25 V-2.5W (Ta), 50W (Tc)-55°C ~ 150°C (TJ)Through HoleI-PAKTO-251-3 Short Leads, IPak, TO-251AA
IRF530A
IRF530A
MOSFET N-CH 100V 14A TO220-3
onsemi
67 $1.51
Tube Last Time BuyN-ChannelMOSFET (Metal Oxide)100 V14A (Tc)10V110mOhm @ 7A, 10V4V @ 250µA36 nC @ 10 V-790 pF @ 25 V-55W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220-3TO-220-3
IRFZ48NPBF
IRFZ48NPBF
MOSFET N-CH 55V 64A TO220AB
Infineon Technologies
574 $1.50
HEXFET® Tube ActiveN-ChannelMOSFET (Metal Oxide)55 V64A (Tc)10V14mOhm @ 32A, 10V4V @ 250µA81 nC @ 10 V±20V1970 pF @ 25 V-130W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
TK20V60W5,LVQ
TK20V60W5,LVQ
MOSFET N-CH 600V 20A 4DFN
Toshiba Semiconductor and Storage
187 $2.88
DTMOSIV Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)600 V20A (Ta)10V190mOhm @ 10A, 10V4.5V @ 1mA55 nC @ 10 V±30V1800 pF @ 300 V-156W (Tc)150°C (TJ)Surface Mount4-DFN-EP (8x8)4-VSFN Exposed Pad
FDPF3860T
FDPF3860T
MOSFET N-CH 100V 20A TO220F
onsemi
387 $1.51
PowerTrench® Tube ActiveN-ChannelMOSFET (Metal Oxide)100 V20A (Tc)10V38.2mOhm @ 5.9A, 10V4.5V @ 250µA35 nC @ 10 V±20V1800 pF @ 25 V-33.8W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-220F-3TO-220-3 Full Pack
FDMS030N06B
FDMS030N06B
MOSFET N-CH 60V 22.1A/100A 8PQFN
onsemi
138 $3.07
PowerTrench® Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V22.1A (Ta), 100A (Tc)10V3mOhm @ 50A, 10V4.5V @ 250µA75 nC @ 10 V±20V7560 pF @ 30 V-2.5W (Ta), 104W (Tc)-55°C ~ 150°C (TJ)Surface Mount8-PQFN (5x6)8-PowerTDFN
SIDR668DP-T1-GE3
SIDR668DP-T1-GE3
MOSFET N-CH 100V 23.2A/95A PPAK
Vishay Siliconix
231 $3.00
TrenchFET® Gen IV Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)100 V23.2A (Ta), 95A (Tc)7.5V, 10V4.8mOhm @ 20A, 10V3.4V @ 250µA108 nC @ 10 V±20V5400 pF @ 50 V-6.25W (Ta), 125W (Tc)-55°C ~ 150°C (TJ)Surface MountPowerPAK® SO-8DCPowerPAK® SO-8
PSMN017-30PL,127
PSMN017-30PL,127
MOSFET N-CH 30V 32A TO220AB
Nexperia USA Inc.
355 $1.55
Tube ActiveN-ChannelMOSFET (Metal Oxide)30 V32A (Tc)4.5V, 10V17mOhm @ 10A, 10V2.15V @ 1mA10.7 nC @ 10 V±20V552 pF @ 15 V-45W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
IRFZ44VPBF
IRFZ44VPBF
MOSFET N-CH 60V 55A TO220AB
Infineon Technologies
97 $1.54
HEXFET® Tube ActiveN-ChannelMOSFET (Metal Oxide)60 V55A (Tc)10V16.5mOhm @ 31A, 10V4V @ 250µA67 nC @ 10 V±20V1812 pF @ 25 V-115W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-220ABTO-220-3
IRF510SPBF
IRF510SPBF
MOSFET N-CH 100V 5.6A D2PAK
Vishay Siliconix
555 $1.53
Tube ActiveN-ChannelMOSFET (Metal Oxide)100 V5.6A (Tc)10V540mOhm @ 3.4A, 10V4V @ 250µA8.3 nC @ 10 V±20V180 pF @ 25 V-3.7W (Ta), 43W (Tc)-55°C ~ 175°C (TJ)Surface MountD²PAK (TO-263)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRLU110PBF
IRLU110PBF
MOSFET N-CH 100V 4.3A TO251AA
Vishay Siliconix
41 $1.54
Tube ActiveN-ChannelMOSFET (Metal Oxide)100 V4.3A (Tc)4V, 5V540mOhm @ 2.6A, 5V2V @ 250µA6.1 nC @ 5 V±10V250 pF @ 25 V-2.5W (Ta), 25W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-251AATO-251-3 Short Leads, IPak, TO-251AA
BSZ010NE2LS5ATMA1
BSZ010NE2LS5ATMA1
MOSFET N-CH 25V 32A/40A TSDSON
Infineon Technologies
141 $2.76
OptiMOS™ 5 Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)25 V32A (Ta), 40A (Tc)4.5V, 10V1mOhm @ 20A, 10V2V @ 250µA29 nC @ 4.5 V±16V3900 pF @ 12 V-2.1W (Ta), 69W (Tc)-55°C ~ 150°C (TJ)Surface MountPG-TSDSON-8-FL8-PowerTDFN