Transistors - FETs, MOSFETs - Single

Category Introduction

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Product List

39097 Items
PDF Mfr Part # Quantity
Available
UnitPrice RFQ Series Packaging Product StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / Case
UJ4SC075009K4S
UJ4SC075009K4S
750V/9MOHM, SIC, STACKED CASCODE
UnitedSiC
7 $39.87
Tube ActiveN-ChannelSiCFET (Silicon Carbide)750 V106A (Tc)12V11.5mOhm @ 70A, 12V5.5V @ 10mA75 nC @ 15 V±20V3340 pF @ 400 V-375W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
IXTF02N450
IXTF02N450
MOSFET N-CH 4500V 200MA I4PAC
IXYS
7 $43.33
Tube ActiveN-ChannelMOSFET (Metal Oxide)4500 V200mA (Tc)10V750Ohm @ 10mA, 10V6.5V @ 250µA10.4 nC @ 10 V±20V256 pF @ 25 V-78W (Tc)-55°C ~ 150°C (TJ)Through HoleISOPLUS i4-PAC™i4-Pac™-5 (3 Leads)
IXTN200N10L2
IXTN200N10L2
MOSFET N-CH 100V 178A SOT227B
IXYS
20 $47.97
Linear L2™ Bulk ActiveN-ChannelMOSFET (Metal Oxide)100 V178A (Tc)10V11mOhm @ 100A, 10V4.5V @ 3mA540 nC @ 10 V±20V23000 pF @ 25 V-830W (Tc)-55°C ~ 150°C (TJ)Chassis MountSOT-227BSOT-227-4, miniBLOC
IXTT1N450HV
IXTT1N450HV
MOSFET N-CH 4500V 1A TO268
IXYS
9 $49.41
Tube ActiveN-ChannelMOSFET (Metal Oxide)4500 V1A (Tc)10V85Ohm @ 50mA, 10V6.5V @ 250µA40 nC @ 10 V±20V1730 pF @ 25 V-520W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-268AATO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MSC025SMA120J
MSC025SMA120J
SICFET N-CH 1.2KV 77A SOT227
Microchip Technology
4 $51.41
Tube ActiveN-ChannelSiCFET (Silicon Carbide)1200 V77A (Tc)20V31mOhm @ 40A, 20V2.8V @ 1mA232 nC @ 20 V+25V, -10V3020 pF @ 1000 V-278W (Tc)-55°C ~ 175°C (TJ)Chassis MountSOT-227 (ISOTOP®)SOT-227-4, miniBLOC
UF3SC120016K3S
UF3SC120016K3S
SICFET N-CH 1200V 107A TO247-3
UnitedSiC
17 $52.62
Tube ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V107A (Tc)12V21mOhm @ 50A, 12V6V @ 10mA218 nC @ 15 V±20V7824 pF @ 800 V-517W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
UF3SC120016K4S
UF3SC120016K4S
SICFET N-CH 1200V 107A TO247-4
UnitedSiC
16 $55.45
Tube ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V107A (Tc)12V21mOhm @ 50A, 12V6V @ 10mA218 nC @ 15 V±20V7824 pF @ 800 V-517W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
IXTK5N250
IXTK5N250
MOSFET N-CH 2500V 5A TO264
IXYS
7 $66.12
Tube ActiveN-ChannelMOSFET (Metal Oxide)2500 V5A (Tc)10V8.8Ohm @ 2.5A, 10V5V @ 1mA200 nC @ 10 V±30V8560 pF @ 25 V-960W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-264 (IXTK)TO-264-3, TO-264AA
IXKN75N60C
IXKN75N60C
MOSFET N-CH 600V 75A SOT-227B
IXYS
6 $67.17
CoolMOS™ Tube ActiveN-ChannelMOSFET (Metal Oxide)600 V75A (Tc)10V36mOhm @ 50A, 10V3.9V @ 5mA500 nC @ 10 V±20V-Super Junction560W (Tc)-40°C ~ 150°C (TJ)Chassis MountSOT-227BSOT-227-4, miniBLOC
IXTX4N300P3HV
IXTX4N300P3HV
MOSFET N-CH 3000V 4A TO247PLUSHV
IXYS
3 $72.71
Polar P3™ Tube ActiveN-ChannelMOSFET (Metal Oxide)3000 V4A (Tc)10V12.5Ohm @ 2A, 10V5V @ 250µA139 nC @ 10 V±20V3680 pF @ 25 V-960W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247PLUS-HVTO-247-3 Variant
UF3SC065007K4S
UF3SC065007K4S
MOSFET N-CH 650V 120A TO247-4
UnitedSiC
9 $79.60
Tube ActiveN-Channel-650 V120A (Tc)12V9mOhm @ 50A, 12V6V @ 10mA214 nC @ 15 V±20V--789W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
UF3SC120009K4S
UF3SC120009K4S
SICFET N-CH 1200V 120A TO247-4
UnitedSiC
6 $86.18
Tube ActiveN-ChannelSiCFET (Cascode SiCJFET)1200 V120A (Tc)12V11mOhm @ 100A, 12V6V @ 10mA234 nC @ 15 V±20V8512 pF @ 100 V-789W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
APL502J
APL502J
MOSFET N-CH 500V 52A ISOTOP
Microchip Technology
4 $87.19
Tube ActiveN-ChannelMOSFET (Metal Oxide)500 V52A (Tc)15V90mOhm @ 26A, 12V4V @ 2.5mA-±30V9000 pF @ 25 V-568W (Tc)-55°C ~ 150°C (TJ)Chassis MountISOTOP®SOT-227-4, miniBLOC
G3R20MT17K
G3R20MT17K
SIC MOSFET N-CH 124A TO247-4
GeneSiC Semiconductor
7 $113.36
G3R™ Tube ActiveN-ChannelSiCFET (Silicon Carbide)1700 V124A (Tc)15V26mOhm @ 75A, 15V2.7V @ 15mA400 nC @ 15 V±15V10187 pF @ 1000 V-809W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
G2R120MT33J
G2R120MT33J
SIC MOSFET N-CH TO263-7
GeneSiC Semiconductor
2 $114.47
G2R™ Tube ActiveN-ChannelSiCFET (Silicon Carbide)3300 V35A20V156mOhm @ 20A, 20V-145 nC @ 20 V+25V, -10V3706 pF @ 1000 V---55°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
IXTL2N450
IXTL2N450
MOSFET N-CH 4500V 2A I5PAK
IXYS
3 $123.79
Tube ActiveN-ChannelMOSFET (Metal Oxide)4500 V2A (Tc)10V23Ohm @ 1A, 10V6V @ 250µA156 nC @ 10 V±20V6900 pF @ 25 V-220W (Tc)-55°C ~ 150°C (TJ)Through HoleISOPLUSi5-Pak™ISOPLUSi5-Pak™
SSM3K72KCT,L3F
SSM3K72KCT,L3F
MOSFET N-CH 60V 400MA CST3
Toshiba Semiconductor and Storage
2,183 $0.25
U-MOSVII-H Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V400mA (Ta)4.5V, 10V1.5Ohm @ 100mA, 10V2.1V @ 250µA0.6 nC @ 4.5 V±20V40 pF @ 10 V-500mW (Ta)-55°C ~ 150°C (TJ)Surface MountCST3SC-101, SOT-883
2N7002KW_R1_00001
2N7002KW_R1_00001
SOT-323, MOSFET
Panjit International Inc.
3,074 $0.19
Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V115mA (Ta)4.5V, 10V3Ohm @ 500mA, 10V2.5V @ 250µA0.8 nC @ 4.5 V±20V35 pF @ 25 V-200mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-323SC-70, SOT-323
NX7002BKHH
NX7002BKHH
MOSFET N-CH 60V 350MA DFN0606-3
Nexperia USA Inc.
2,036 $0.28
Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V350mA (Ta)4.5V, 10V2.8Ohm @ 200mA, 10V2.1V @ 250µA1 nC @ 10 V±20V22.2 pF @ 30 V-380mW (Ta), 2.8W (Tc)-55°C ~ 150°C (TJ)Surface MountDFN0606-33-XFDFN
SSM3K72CFS,LF
SSM3K72CFS,LF
MOSFET N-CH 60V 170MA SSM
Toshiba Semiconductor and Storage
1,396 $0.21
U-MOSVII-H Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V170mA (Ta)4.5V, 10V3.9Ohm @ 100mA, 10V2.1V @ 250µA0.35 nC @ 4.5 V±20V17 pF @ 10 V-150mW (Ta)-55°C ~ 150°C (TJ)Surface MountSSMSC-75, SOT-416