Transistors - FETs, MOSFETs - Single

Category Introduction

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Product List

39097 Items
PDF Mfr Part # Quantity
Available
UnitPrice RFQ Series Packaging Product StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / Case
IPP200N25N3GXKSA1
IPP200N25N3GXKSA1
MOSFET N-CH 250V 64A TO220-3
Infineon Technologies
23 $9.64
OptiMOS™ Tube ActiveN-ChannelMOSFET (Metal Oxide)250 V64A (Tc)10V20mOhm @ 64A, 10V4V @ 270µA86 nC @ 10 V±20V7100 pF @ 100 V-300W (Tc)-55°C ~ 175°C (TJ)Through HolePG-TO220-3TO-220-3
UJ4C075060K4S
UJ4C075060K4S
SICFET N-CH 750V 28A TO247-4
UnitedSiC
19 $10.77
Tube ActiveN-ChannelSiCFET (Cascode SiCJFET)750 V28A (Tc)-74mOhm @ 20A, 12V6V @ 10mA37.8 nC @ 15 V±20V1422 pF @ 100 V-155W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
IXFH50N20
IXFH50N20
MOSFET N-CH 200V 50A TO247AD
IXYS
58 $10.95
HiPerFET™ Tube Not For New DesignsN-ChannelMOSFET (Metal Oxide)200 V50A (Tc)10V45mOhm @ 25A, 10V4V @ 4mA220 nC @ 10 V±20V4400 pF @ 25 V-300W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247AD (IXFH)TO-247-3
G3R75MT12K
G3R75MT12K
SIC MOSFET N-CH 41A TO247-4
GeneSiC Semiconductor
33 $11.20
G3R™ Tube ActiveN-ChannelSiCFET (Silicon Carbide)1200 V41A (Tc)15V90mOhm @ 20A, 15V2.69V @ 7.5mA54 nC @ 15 V±15V1560 pF @ 800 V-207W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
STP42N65M5
STP42N65M5
MOSFET N-CH 650V 33A TO220-3
STMicroelectronics
4 $11.24
MDmesh™ V Tube ActiveN-ChannelMOSFET (Metal Oxide)650 V33A (Tc)10V79mOhm @ 16.5A, 10V5V @ 250µA100 nC @ 10 V±25V4650 pF @ 100 V-190W (Tc)150°C (TJ)Through HoleTO-220TO-220-3
IXTH15N50L2
IXTH15N50L2
MOSFET N-CH 500V 15A TO247
IXYS
41 $11.41
Linear L2™ Tube ActiveN-ChannelMOSFET (Metal Oxide)500 V15A (Tc)10V480mOhm @ 7.5A, 10V4.5V @ 250µA123 nC @ 10 V±20V4080 pF @ 25 V-300W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247 (IXTH)TO-247-3
G3R75MT12J
G3R75MT12J
SIC MOSFET N-CH 42A TO263-7
GeneSiC Semiconductor
35 $11.64
G3R™ Tube ActiveN-ChannelSiCFET (Silicon Carbide)1200 V42A (Tc)15V90mOhm @ 20A, 15V2.69V @ 7.5mA54 nC @ 15 V±15V1560 pF @ 800 V-224W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
LSIC1MO120E0160
LSIC1MO120E0160
SICFET N-CH 1200V 22A TO247-3
Littelfuse Inc.
32 $11.99
Tube ActiveN-ChannelSiCFET (Silicon Carbide)1200 V22A (Tc)20V200mOhm @ 10A, 20V4V @ 5mA57 nC @ 20 V+22V, -6V870 pF @ 800 V-125W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247ADTO-247-3
IXFH340N075T2
IXFH340N075T2
MOSFET N-CH 75V 340A TO247AD
IXYS
48 $12.18
HiPerFET™, TrenchT2™ Tube ActiveN-ChannelMOSFET (Metal Oxide)75 V340A (Tc)10V3.2mOhm @ 100A, 10V4V @ 3mA300 nC @ 10 V±20V19000 pF @ 25 V-935W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247AD (IXFH)TO-247-3
IXTH11P50
IXTH11P50
MOSFET P-CH 500V 11A TO247
IXYS
42 $12.18
Tube ActiveP-ChannelMOSFET (Metal Oxide)500 V11A (Tc)10V750mOhm @ 5.5A, 10V5V @ 250µA130 nC @ 10 V±20V4700 pF @ 25 V-300W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247 (IXTH)TO-247-3
IPW60R070C6FKSA1
IPW60R070C6FKSA1
MOSFET N-CH 600V 53A TO247-3
Infineon Technologies
42 $12.52
CoolMOS™ Tube Not For New DesignsN-ChannelMOSFET (Metal Oxide)600 V53A (Tc)10V70mOhm @ 25.8A, 10V3.5V @ 1.72mA170 nC @ 10 V±20V3800 pF @ 100 V-391W (Tc)-55°C ~ 150°C (TJ)Through HolePG-TO247-3-1TO-247-3
IXTH48P20P
IXTH48P20P
MOSFET P-CH 200V 48A TO247
IXYS
75 $12.74
PolarP™ Tube ActiveP-ChannelMOSFET (Metal Oxide)200 V48A (Tc)10V85mOhm @ 500mA, 10V4.5V @ 250µA103 nC @ 10 V±20V5400 pF @ 25 V-462W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247 (IXTH)TO-247-3
G3R160MT17D
G3R160MT17D
SIC MOSFET N-CH 21A TO247-3
GeneSiC Semiconductor
40 $12.87
G3R™ Tube ActiveN-ChannelSiCFET (Silicon Carbide)1700 V21A (Tc)15V208mOhm @ 12A, 15V2.7V @ 5mA51 nC @ 15 V±15V1272 pF @ 1000 V-175W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3
IXFH50N30Q3
IXFH50N30Q3
MOSFET N-CH 300V 50A TO247AD
IXYS
65 $13.02
HiPerFET™, Q3 Class Tube ActiveN-ChannelMOSFET (Metal Oxide)300 V50A (Tc)10V80mOhm @ 25A, 10V6.5V @ 4mA65 nC @ 10 V±20V3160 pF @ 25 V-690W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-247AD (IXFH)TO-247-3
G3R160MT17J
G3R160MT17J
SIC MOSFET N-CH 22A TO263-7
GeneSiC Semiconductor
48 $13.65
G3R™ Tube ActiveN-ChannelSiCFET (Silicon Carbide)1700 V22A (Tc)15V208mOhm @ 12A, 15V2.7V @ 5mA51 nC @ 15 V±15V1272 pF @ 1000 V-187W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263-7TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
UF3C065030B3
UF3C065030B3
MOSFET N-CH 650V 65A TO263
UnitedSiC
25 $19.66
Tape & Reel (TR) ActiveN-Channel-650 V65A (Tc)12V35mOhm @ 40A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-242W (Tc)-55°C ~ 175°C (TJ)Surface MountTO-263 (D2Pak)TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDL100N50F
FDL100N50F
MOSFET N-CH 500V 100A TO264-3
onsemi
16 $13.69
UniFET™ Tube ActiveN-ChannelMOSFET (Metal Oxide)500 V100A (Tc)10V55mOhm @ 50A, 10V5V @ 250µA238 nC @ 10 V±30V12000 pF @ 25 V-2500W (Tc)-55°C ~ 150°C (TJ)Through HoleTO-264-3TO-264-3, TO-264AA
IXFT120N25X3HV
IXFT120N25X3HV
MOSFET N-CH 250V 120A TO268HV
IXYS
40 $14.36
HiPerFET™, Ultra X3 Tube ActiveN-ChannelMOSFET (Metal Oxide)250 V120A (Tc)10V12mOhm @ 60A, 10V4.5V @ 4mA122 nC @ 10 V±20V7870 pF @ 25 V-520W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-268AATO-268-3, D³Pak (2 Leads + Tab), TO-268AA
UF3C065040K4S
UF3C065040K4S
MOSFET N-CH 650V 54A TO247-4
UnitedSiC
47 $14.59
Tube ActiveN-Channel-650 V54A (Tc)12V52mOhm @ 40A, 12V6V @ 10mA43 nC @ 12 V±25V1500 pF @ 100 V-326W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-4TO-247-4
UJ3C120080K3S
UJ3C120080K3S
SICFET N-CH 1200V 33A TO247-3
UnitedSiC
41 $15.88
Tube Not For New DesignsN-ChannelSiCFET (Cascode SiCJFET)1200 V33A (Tc)12V100mOhm @ 20A, 12V6V @ 10mA51 nC @ 15 V±25V1500 pF @ 100 V-254.2W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247-3TO-247-3