Transistors - FETs, MOSFETs - Single

Category Introduction

Discrete Field Effect Transistors (FETs) are widely used in power conversion, motor control, solid-state lighting, and other applications where their characteristic ability to be switched on & off at high frequencies while carrying substantial amounts of current is advantageous. They are used almost universally for applications requiring voltage ratings of a few hundred volts or less, above which other device types such as IGBTs become more competitive.

Product List

39097 Items
PDF Mfr Part # Quantity
Available
UnitPrice RFQ Series Packaging Product StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / Case
EPC2001C
EPC2001C
GANFET N-CH 100V 36A DIE OUTLINE
EPC
65 $4.84
eGaN® Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)100 V36A (Ta)5V7mOhm @ 25A, 5V2.5V @ 5mA9 nC @ 5 V+6V, -4V900 pF @ 50 V---40°C ~ 150°C (TJ)Surface MountDie Outline (11-Solder Bar)Die
EPC2215
EPC2215
GAN TRANS 200V 8MOHM BUMPED DIE
EPC
5 $6.29
Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)200 V32A (Ta)5V8mOhm @ 20A, 5V2.5V @ 6mA17.7 nC @ 5 V+6V, -4V1790 pF @ 100 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2010C
EPC2010C
GANFET N-CH 200V 22A DIE OUTLINE
EPC
83 $6.73
eGaN® Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)200 V22A (Ta)5V25mOhm @ 12A, 5V2.5V @ 3mA5.3 nC @ 5 V+6V, -4V540 pF @ 100 V---40°C ~ 150°C (TJ)Surface MountDie Outline (7-Solder Bar)Die
EPC2206
EPC2206
GANFET N-CH 80V 90A DIE
EPC
66 $6.29
eGaN® Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)80 V90A (Ta)5V2.2mOhm @ 29A, 5V2.5V @ 13mA19 nC @ 5 V+6V, -4V1940 pF @ 40 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2029
EPC2029
GANFET N-CH 80V 48A DIE
EPC
133 $6.65
eGaN® Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)80 V48A (Ta)5V3.2mOhm @ 30A, 5V2.5V @ 12mA13 nC @ 5 V+6V, -4V1410 pF @ 40 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2031
EPC2031
GANFET NCH 60V 31A DIE
EPC
145 $6.46
eGaN® Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)60 V31A (Ta)-2.6mOhm @ 30A, 5V2.5V @ 15mA17 nC @ 5 V-1800 pF @ 300 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2021
EPC2021
GANFET N-CH 80V 90A DIE
EPC
12 $7.77
eGaN® Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)80 V90A (Ta)5V2.5mOhm @ 29A, 5V2.5V @ 14mA15 nC @ 5 V+6V, -4V1650 pF @ 40 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2032
EPC2032
GANFET N-CH 100V 48A DIE
EPC
9 $7.03
eGaN® Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)100 V48A (Ta)5V4mOhm @ 30A, 5V2.5V @ 11mA15 nC @ 5 V+6V, -4V1530 pF @ 50 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2022
EPC2022
GANFET N-CH 100V 90A DIE
EPC
37 $8.39
eGaN® Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)100 V90A (Ta)5V3.2mOhm @ 25A, 5V2.5V @ 12mA-+6V, -4V1500 pF @ 50 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2024
EPC2024
GANFET NCH 40V 60A DIE
EPC
38 $7.52
eGaN® Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)40 V90A (Ta)5V1.5mOhm @ 37A, 5V2.5V @ 19mA-+6V, -4V2100 pF @ 20 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2034
EPC2034
GANFET N-CH 200V 48A DIE
EPC
70 $8.36
eGaN® Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)200 V48A (Ta)5V10mOhm @ 20A, 5V2.5V @ 7mA8.8 nC @ 5 V+6V, -4V950 pF @ 100 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2034C
EPC2034C
GANFET N-CH 200V 48A DIE
EPC
71 $7.87
eGaN® Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)200 V48A (Ta)5V8mOhm @ 20A, 5V2.5V @ 7mA11 nC @ 5 V+6V, -4V1140 pF @ 100 V---40°C ~ 150°C (TJ)Surface MountDieDie
EPC2033
EPC2033
GANFET N-CH 150V 48A DIE
EPC
31 $8.57
eGaN® Tape & Reel (TR) ActiveN-ChannelGaNFET (Gallium Nitride)150 V48A (Ta)-7mOhm @ 25A, 5V2.5V @ 9mA10 nC @ 5 V-1140 pF @ 75 V---Surface MountDieDie
T2N7002AK,LM
T2N7002AK,LM
MOSFET N-CH 60V 200MA SOT23
Toshiba Semiconductor and Storage
5,794 $0.16
U-MOSVII-H Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V200mA (Ta)4.5V, 10V3.9Ohm @ 100mA, 10V2.1V @ 250µA0.35 nC @ 4.5 V±20V17 pF @ 10 V-320mW (Ta)150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
T2N7002BK,LM
T2N7002BK,LM
MOSFET N-CH 60V 400MA SOT23-3
Toshiba Semiconductor and Storage
1,695 $0.17
U-MOSVII-H Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V400mA (Ta)4.5V, 10V1.5Ohm @ 100mA, 10V2.1V @ 250µA0.6 nC @ 4.5 V±20V40 pF @ 10 V-320mW (Ta)150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3
DMN67D8LW-13
DMN67D8LW-13
MOSFET N-CH 60V 240MA SOT323
Diodes Incorporated
497 $0.25
Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V240mA (Ta)5V, 10V5Ohm @ 500mA, 10V2.5V @ 250µA0.82 nC @ 10 V±30V22 pF @ 25 V-320mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-323SC-70, SOT-323
NX7002AK,215
NX7002AK,215
MOSFET N-CH 60V 190MA TO236AB
Nexperia USA Inc.
3,886 $0.22
Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)60 V190mA (Ta)5V, 10V4.5Ohm @ 100mA, 10V2.1V @ 250µA0.43 nC @ 4.5 V±20V17 pF @ 10 V-265mW (Ta), 1.33W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
SSM3K35CTC,L3F
SSM3K35CTC,L3F
MOSFET N-CH 20V 250MA CST3C
Toshiba Semiconductor and Storage
234 $0.33
U-MOSIII Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)20 V250mA (Ta)1.2V, 4.5V1.1Ohm @ 150mA, 4.5V1V @ 100µA0.34 nC @ 4.5 V±10V36 pF @ 10 V-500mW (Ta)150°C (TJ)Surface MountCST3CSC-101, SOT-883
BSS84AK,215
BSS84AK,215
MOSFET P-CH 50V 180MA TO236AB
Nexperia USA Inc.
3,242 $0.24
Automotive, AEC-Q101, TrenchMOS™ Tape & Reel (TR) ActiveP-ChannelMOSFET (Metal Oxide)50 V180mA (Ta)10V7.5Ohm @ 100mA, 10V2.1V @ 250µA0.35 nC @ 5 V±20V36 pF @ 25 V-350mW (Ta), 1.14W (Tc)-55°C ~ 150°C (TJ)Surface MountTO-236ABTO-236-3, SC-59, SOT-23-3
DMN63D8L-7
DMN63D8L-7
MOSFET N-CH 30V 350MA SOT23
Diodes Incorporated
2,629 $0.26
Tape & Reel (TR) ActiveN-ChannelMOSFET (Metal Oxide)30 V350mA (Ta)2.5V, 10V2.8Ohm @ 250mA, 10V1.5V @ 250µA0.9 nC @ 10 V±20V23.2 pF @ 25 V-350mW (Ta)-55°C ~ 150°C (TJ)Surface MountSOT-23-3TO-236-3, SC-59, SOT-23-3