Transistors - FETs, MOSFETs - RF

Category Introduction

RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.

Product List

3813 Items

PDF	Mfr Part #	Quantity Available	UnitPrice	RFQ	Series	Packaging	Product Status	Transistor Type	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
	BLC10G18XS-551AVTZ BLC10G18XS-551AVT/SOT1258/TRAYDP Ampleon USA Inc.	2	$83.98			Tray	Active	LDMOS (Dual), Common Source	1.805GHz ~ 1.88GHz	16.1dB	32 V	2.8µA	-	750 mA	550W	65 V	SOT-1258-4	SOT1258-4
	BLC10G19XS-600AVTZ BLC10G19XS-600AVT/SOT1258/TRAYDP Ampleon USA Inc.	6	$107.74			Tray	Active	-	-	-	-	-	-	-	-	-	-	-
	ARF477FL RF PWR MOSFET 500V 10A Microchip Technology	5	$143.27			Bulk	Active	2 N-Channel (Dual) Common Source	65MHz	16dB	150 V	15A	-	-	400W	500 V	-	-
	BLF884P,112 RF FET LDMOS 104V 21DB SOT1121A Ampleon USA Inc.	7	$144.17			Tray	Active	LDMOS (Dual), Common Source	860MHz	21dB	50 V	-	-	650 mA	150W	104 V	SOT-1121A	LDMOST
	BLF644PU RF FET LDMOS 65V 23.5DB SOT1228A Ampleon USA Inc.	4	$153.14			Tray	Active	LDMOS (Dual), Common Source	860MHz	23.5dB	32 V	-	-	200 mA	100W	65 V	SOT-1228A	LDMOST
	CG2H80120D-GP4 120W GAN HEMT 28V 8.0GHZ DIE, G2 Wolfspeed, Inc.	2	$169.37		GaN	Tray	Active	HEMT	8GHz	12dB	28 V	28A	-	-	120W	84 V	Die	Die
	CGH40045P 45W, GAN HEMT, 28V, DC-4.0GHZ, P Wolfspeed, Inc.	7	$184.24		GaN	Tray	Not For New Designs	HEMT	4GHz	14dB	28 V	-	-	400 mA	45W	84 V	440206	440206
	BLF989U BLF989/SOT539/TRAY Ampleon USA Inc.	4	$198.32			Tray	Active	LDMOS (Dual), Common Source	400MHz ~ 860MHz	20dB	50 V	2.8µA	-	1.3 A	900W	108 V	SOT-539A	SOT539A
	BLL6H0514-25,112 RF FET LDMOS 100V 21DB SOT467C Ampleon USA Inc.	5	$247.80			Tray	Not For New Designs	LDMOS	1.2GHz ~ 1.4GHz	21dB	50 V	2.5A	-	50 mA	25W	100 V	SOT-467C	SOT467C
	BLF888EU RF FET LDMOS 104V 17DB SOT539A Ampleon USA Inc.	2	$295.08			Tray	Active	LDMOS (Dual), Common Source	600MHz ~ 700MHz	17dB	50 V	-	-	600 mA	750W	104 V	SOT-539A	SOT539A
	MRFE6VP61K25HR5 FET RF 2CH 133V 230MHZ NI-1230 NXP USA Inc.	4	$298.54			Tape & Reel (TR)	Active	LDMOS (Dual)	230MHz	24dB	50 V	-	-	100 mA	1250W	133 V	NI-1230	NI-1230
	CGHV35150F RF MOSFET HEMT 50V 440193 Wolfspeed, Inc.	2	$370.14		GaN	Tube	Active	HEMT	2.9GHz ~ 3.5GHz	13.3dB	50 V	12A	-	500 mA	170W	125 V	440193	440193
	MRFX1K80HR5 RF MOSFET LDMOS 65V NI-1230H-4S NXP USA Inc.	2	$272.33			Tape & Reel (TR)	Active	LDMOS (Dual)	1.8MHz ~ 470MHz	24dB	65 V	10µA	-	200 mA	1800W	182 V	SOT-979A	NI-1230-4H
	CGH40180PP RF MOSFET HEMT 28V 440199 Wolfspeed, Inc.	2	$439.47		GaN	Tray	Active	HEMT	0Hz ~ 2.5GHz	19dB	28 V	56A	-	2 A	220W	84 V	440199	440199
	MMRF5014HR5 FET RF 125V 2.5GHZ NI360 NXP USA Inc.	2	$636.35			Tape & Reel (TR)	Active	HEMT	2.5GHz	18dB	50 V	-	-	350 mA	125W	125 V	NI-360H-2SB	NI-360H-2SB
	CGHV96100F2 RF MOSFET HEMT 40V 440210 Wolfspeed, Inc.	3	$667.13		GaN	Tray	Active	HEMT	7.9GHz ~ 9.6GHz	10.2dB	40 V	12A	-	1 A	131W	100 V	440210	440210
	GTVA107001EC-V1-R0 700W GAN HEMT 50V 0.9-1.2GHZ FET Wolfspeed, Inc.	3	$853.57		GaN	Tape & Reel (TR)	Active	HEMT	960MHz ~ 1.215GHz	20dB	50 V	-	-	100 mA	890W	125 V	SOT-957A	H-36248-2
	IGN1011L1200 GAN, RF POWER TRANSISTOR, L-BAND Integra Technologies Inc.	2	$892.35			Tray	Active	HEMT	1.03GHz ~ 1.09GHz	16.8dB	50 V	-	-	160 mA	1250W	180 V	PL84A1	PL84A1
	GTVA101K42EV-V1-R0 GAN HEMT 50V 1400W 0.96-1.4GHZ Wolfspeed, Inc.	2	$991.12		GaN	Tape & Reel (TR)	Active	HEMT	960MHz ~ 1.4GHz	17dB	50 V	-	-	83.6 mA	1400W	125 V	H-36275-4	H-36275-4
	AFT27S006NT1 RF MOSFET LDMOS 28V PLD1.5W NXP USA Inc.	42	$11.35			Tape & Reel (TR)	Active	LDMOS	2.17GHz	22dB	28 V	-	-	70 mA	28.8dBm	65 V	PLD-1.5W	PLD-1.5W