Transistors - FETs, MOSFETs - RF

Category Introduction

RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.

Product List

3813 Items

PDF	Mfr Part #	Quantity Available	UnitPrice	RFQ	Series	Packaging	Product Status	Transistor Type	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
	MRFE6VP5600HSR5 LATERAL N-CHANNEL BROADBAND RF P NXP USA Inc.	4	$129.72			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
	TM-30 TM-30 - 30W BROADBAND RF POWER G Ampleon USA Inc.	4	$130.64			Tray	Obsolete	GaN HEMT	-	-	-	-	-	-	30W	-	-	-
	CLF1G0035S-50 CLF1G0035S-50 - 50W BROADBAND RF Ampleon USA Inc.	2	$131.79			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
	MRF085HR5178 MRF085H - WIDEBAND RF POWER LDMO NXP Semiconductors	5	$131.81			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
	AFT26H250-24SR6 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc.	7	$137.21			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
	BLF278C BLF278C - DUAL PUSH-PULL N-CHANN Rochester Electronics, LLC	6	$144.05			Bulk	Obsolete	2 N-Channel (Dual) Common Source	-	18dB	50 V	2.5mA	-	200 mA	300W	125 V	SOT-262A1	CDFM4
	CLF1G0035-50 CLF1G0035-50 - 50W BROADBAND RF Ampleon USA Inc.	3	$149.20			Tray	Active	GaN HEMT	3GHz	11.5dB	50 V	-	-	150 mA	50W	150 V	SOT467C	SOT467C
	A2T26H160-24SR3 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	5	$163.31			Bulk	Active	LDMOS (Dual)	2.58GHz	15.5dB	28 V	-	-	350 mA	28W	65 V	NI-780S-4L2L	NI-780S-4L2L
	MRFE6VP61K25NR6 WIDEBAND RF POWER LDMOS TRANSIST Freescale Semiconductor	2	$189.63			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
	MMRF1306HR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	4	$192.35			Bulk	Active	LDMOS (Dual)	230MHz	24dB	50 V	-	-	100 mA	1250W	133 V	SOT-979A	NI-1230-4H
	A2T21H360-24SR6 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc.	4	$191.50			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
	SA2T18H450W19SR6 A2T18H450 - AIRFAST RF POWER LDM NXP Semiconductors	5	$196.45			Bulk	Obsolete	LDMOS (Dual)	1.805GHz ~ 1.88GHz	16.6dB	30 V	10µA	-	800 mA	89W	65 V	NI-1230S-4S4S	NI-1230S-4S4S
	MRF6VP3450HR5 LATERAL N-CHANNEL BROADBAND RF P NXP Semiconductors	2	$206.04			Bulk	Obsolete	LDMOS (Dual), Common Source	470MHz ~ 860MHz	22.5dB	50 V	10µA	-	1.4 A	450W	110 V	NI-1230	NI-1230
	A2T21H450W19SR6 A2T21H450W19 - AIRFAST RF POWER NXP Semiconductors	5	$213.36			Bulk	Obsolete	LDMOS	2.11GHz ~ 2.2GHz	15.7dB	30 V	10µA	-	800 mA	89W	65 V	NI-1230S-4S4S	NI-1230S-4S4S
	TM-100 TM-100 - 100W BROADBAND RF POWER Ampleon USA Inc.	2	$217.90			Tray	Obsolete	GaN HEMT	-	-	-	-	-	-	100W	-	-	-
	AFV09P350-04GNR3 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	5	$230.24			Bulk	Active	LDMOS (Dual)	920MHz	19.5dB	48 V	-	-	860 mA	100W	105 V	OM-780G-4L	OM-780G-4L
	CLF1G0035-100 CLF1G0035-100 - 100W BROADBAND R Rochester Electronics, LLC	2	$226.89			Bulk	Obsolete	HEMT	3.5GHz	12dB	50 V	-	-	330 mA	100W	150 V	SOT-467C	SOT467C
	CLF1G0035S-100P CLF1G0035S-100 - 100W BROADBAND Ampleon USA Inc.	4	$270.49			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
	MRF6VP11KHR5 RF POWER FIELD-EFFECT TRANSISTOR NXP USA Inc.	4	$292.06			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
	MRF6V14300HSR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	4	$416.71			Bulk	Active	LDMOS	1.4GHz	18dB	50 V	-	-	150 mA	330W	100 V	NI-780S	NI-780S