Transistors - FETs, MOSFETs - RF

Category Introduction

RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.

Product List

3813 Items

PDF	Mfr Part #	Quantity Available	UnitPrice	RFQ	Series	Packaging	Product Status	Transistor Type	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
	AFT09S282NR3 REEL AFT09S282NR3 REEL Freescale Semiconductor	6	$160.28			Bulk	Active	LDMOS	720MHz ~ 960MHz	20dB	28 V	10µA	-	1.4 A	80W	70 V	OM-780-2	OM-780-2
	MRF6P18190HR6 RF K BAND, N-CHANNEL Freescale Semiconductor	7	$164.89			Bulk	Active	LDMOS	1.805GHz ~ 1.88GHz	15.9dB	28 V	10µA	-	2 A	44W	68 V	NI-1230	NI-1230
	CGH60120D-GP4 RF MOSFET HEMT 28V DIE Wolfspeed, Inc.	4	$166.08		GaN	Tray	Active	HEMT	6GHz	13dB	28 V	-	-	1 A	120W	84 V	Die	Die
	AFT26H250W03SR6 RF POWER FIELD EFFECT TRANSISTOR Freescale Semiconductor	3	$179.92			Bulk	Active	LDMOS (Dual)	2.496GHz ~ 2.69GHz	14.1dB	28 V	10µA	-	700 mA	50W	65 V	NI-1230-4S	NI-1230-4S
	CLF3H0060S-30U CLF3H0060S-30U/SOT1227/TRAY Ampleon USA Inc.	4	$179.49			Tray	Active	HEMT	0Hz ~ 6GHz	17dB	50 V	-	-	60 mA	30W	150 V	SOT-1227B	SOT1227B
	CGH35060F2 60W GAN HEMT 28V 4.0GHZ FLANGE Wolfspeed, Inc.	6	$182.69		GaN	Tray	Active	HEMT	3.1GHz ~ 3.5GHz	13dB	28 V	-	-	200 mA	47.6dBm	125 V	440193	440193
	MRF1K50HR5178 AIRFAST RF POWER LDMOS TRANSISTO Freescale Semiconductor	2	$192.50			Bulk	Active	LDMOS (Dual)	1.8MHz ~ 500MHz	23.7dB	50 V	20µA	-	100 mA	1500W	135 V	SOT-979A	NI-1230-4H
	ART1K6FHSU ART1K6FHS/SOT539/TRAY Ampleon USA Inc.	5	$198.29		ART	Tray	Active	LDMOS (Dual), Common Source	1MHz ~ 425MHz	28dB	65 V	1.2µA	-	600 mA	1600W	177 V	SOT-539BN	SOT539BN
	CLF1G0035-100P RF SMALL SIGNAL FIELD-EFFECT TRA NXP USA Inc.	6	$199.80			Bulk	Active	HEMT	3.5GHz	12.5dB	50 V	-	-	330 mA	100W	150 V	SOT-1228A	LDMOST
	MRF6VP3450HSR5 RF ULTRA HIGH FREQUENCY BAND, N- Freescale Semiconductor	3	$201.78			Bulk	Active	LDMOS (Dual)	470MHz ~ 860MHz	22.5dB	50 V	10µA	-	1.4 A	450W	110 V	NI-1230-4S	NI-1230-4S
	MRF7S27130HSR3 RF S BAND, N-CHANNEL Freescale Semiconductor	5	$207.62			Bulk	Active	LDMOS	2.7GHz	16.5dB	28 V	-	-	1.5 A	23W	65 V	NI-780S	NI-780S
	MMRF1310HR5 FET RF 2CH 133V 230MHZ NI780 NXP USA Inc.	8	$152.98			Tape & Reel (TR)	Active	LDMOS (Dual)	230MHz	26.5dB	50 V	-	-	100 mA	300W	133 V	NI-780-4	NI-780-4
	CLF3H0035S-100U CLF3H0035S-100U/SOT467/TRAY Ampleon USA Inc.	5	$209.32			Tray	Active	HEMT	0Hz ~ 3.5GHz	15dB	50 V	-	-	300 mA	100W	150 V	SOT-467B	SOT-467B
	ART1K6FHGJ ART1K6FHG/SOT1248/REELDP Ampleon USA Inc.	2	$231.68		ART	Tape & Reel (TR)	Active	LDMOS (Dual), Common Source	1MHz ~ 425MHz	28dB	65 V	1.2µA	-	600 mA	1600W	177 V	SOT-539AN	SOT539AN
	BLF888B,112 RF FET LDMOS 104V 21DB SOT539A Ampleon USA Inc.	5	$243.42			Tray	Not For New Designs	LDMOS (Dual), Common Source	860MHz	21dB	50 V	-	-	1.3 A	250W	104 V	SOT-539A	SOT539A
	AFT18HW355SR5 RF N CHANNEL POWER MOSFET Freescale Semiconductor	5	$251.55			Bulk	Active	LDMOS (Dual)	1.88GHz	15.2dB	28 V	-	-	1.1 A	63W	65 V	NI-1230S	NI-1230S
	MRFX600HSR5 TRANS LDMOS 600W 400 MHZ 65V NXP USA Inc.	5	$182.26			Tape & Reel (TR)	Active	LDMOS (Dual)	1.8MHz ~ 400MHz	26.4dB	65 V	10µA	-	100 mA	600W	179 V	NI-780S-4L	NI-780S-4L
	MRFX600GSR5 TRANS LDMOS 600W 400 MHZ 65V NXP USA Inc.	6	$184.37			Tape & Reel (TR)	Active	LDMOS (Dual)	1.8MHz ~ 400MHz	26.4dB	65 V	10µA	-	100 mA	600W	179 V	NI-780GS-4L	NI-780GS-4L
	MMRF5017HSR5 RF MOSFET HEMT 50V NI400S-2S NXP USA Inc.	3	$298.23			Tray	Active	HEMT	30MHz ~ 2.2GHz	18.4dB	50 V	-	-	200 mA	125W	150 V	NI-400S-2S	NI-400S-2S
	MRF6VP2600HR5-FR RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	5	$317.48			Bulk	Active	LDMOS (Dual)	500MHz	25dB	50 V	50µA	-	2.6 A	600W	110 V	NI-1230	NI-1230