Transistors - FETs, MOSFETs - RF

Category Introduction

RF Transistors, FETs, and MOSFETs are a semiconductor device with three terminals where the current flowing through the device is controlled by an electric field. The devices in this family are designed be used in equipment involving radio frequencies. The transistor types for amplifying or switching the signal or power include E-pHEMT, LDMOS, MESFET, N-channel, P-channel, pHEMT, silicon carbide, 2 N-channel, and 4 N-channel.

Product List

3813 Items
PDF Mfr Part # Quantity
Available
UnitPrice RFQ Series Packaging Product StatusTransistor TypeFrequencyGainVoltage - TestCurrent Rating (Amps)Noise FigureCurrent - TestPower - OutputVoltage - RatedPackage / CaseSupplier Device Package
CE3512K2-C1
CE3512K2-C1
RF FET 4V 12GHZ 4MICROX
CEL
114 $1.05
Tape & Reel (TR) ActivepHEMT FET12GHz13.7dB2 V15mA0.5dB10 mA125mW4 V4-Micro-X4-Micro-X
SAV-541+
SAV-541+
RF MOSFET E-PHEMT 3V SC70-4
Mini-Circuits
291 $3.21
Tape & Reel (TR) ActiveE-pHEMT45MHz ~ 6GHz23.2dB3 V-1.9dB @ 5.8GHz60 mA21.5dB5 VSC-82A, SOT-343SC-70-4
BLP9G0722-20GZ
BLP9G0722-20GZ
RF MOSFET LDMOS 28V SOT1483-1
Ampleon USA Inc.
50 $17.73
Tape & Reel (TR) ActiveLDMOS400MHz ~ 2.7GHz19dB28 V1.4µA-180 mA43dBm65 VSOT-1483-1SOT1483-1
BLM10D3438-35ABZ
BLM10D3438-35ABZ
BLM10D3438-35AB/SOT1462/REELDP
Ampleon USA Inc.
2 $22.23
Tape & Reel (TR) ActiveLDMOS3.4GHz ~ 3.8GHz33dB26 V1.4µA-41 mA-65 V20-QFN Exposed Pad20-PQFN (8x8)
NPTB00004A
NPTB00004A
HEMT N-CH 28V 5W DC-6GHZ 8SOIC
MACOM Technology Solutions
13 $19.79
Tube ActiveHEMT0Hz ~ 6GHz14.8dB28 V1.4A-50 mA4W100 V8-SOIC (0.154", 3.90mm Width)8-SOIC
MRF136
MRF136
FET RF 65V 400MHZ 211-07
MACOM Technology Solutions
10 $42.09
Tray ActiveN-Channel400MHz16dB28 V2.5A1dB25 mA15W65 V211-07211-07, Style 2
PD57060-E
PD57060-E
FET RF 65V 945MHZ PWRSO10
STMicroelectronics
16 $55.81
Tube ActiveLDMOS945MHz14.3dB28 V7A-100 mA60W65 VPowerSO-10 Exposed Bottom Pad10-PowerSO
BLC2425M9LS250Z
BLC2425M9LS250Z
RF FET LDMOS 65V 18.5DB SOT12701
Ampleon USA Inc.
12 $92.80
Tray ActiveLDMOS2.45GHz18.5dB32 V--20 mA250W65 VSOT-1270-1SOT-1270-1
ART150FEU
ART150FEU
ART150FE/SOT467/TRAY
Ampleon USA Inc.
8 $116.98
ART Tray ActiveLDMOS1MHz ~ 650MHz31dB65 V1.2µA-20 mA150W200 VSOT-467CSOT467C
BLF573,112
BLF573,112
RF MOSFET LDMOS 50V LDMOST
Ampleon USA Inc.
3 $121.60
Tray ActiveLDMOS225MHz27.2dB50 V42A-900 mA300W110 VSOT-502ASOT502A
BLF174XR,112
BLF174XR,112
RF FET LDMOS 110V 28DB SOT1214A
Ampleon USA Inc.
6 $128.81
Tray ActiveLDMOS (Dual), Common Source108MHz28.5dB50 V--100 mA600W110 VSOT-1214ASOT1214A
BLF2425M9L30U
BLF2425M9L30U
RF FET LDMOS 65V 18.5DB SOT1135A
Ampleon USA Inc.
5 $128.25
Tray ActiveLDMOS2.45GHz18.5dB32 V--20 mA30W65 VSOT-1135ACDFM2
BLF183XRU
BLF183XRU
RF FET LDMOS 135V 28DB SOT1121A
Ampleon USA Inc.
8 $135.97
Tray ActiveLDMOS (Dual), Common Source108MHz28dB50 V--100 mA350W135 VSOT-1121ALDMOST
BLC2425M10LS500PZ
BLC2425M10LS500PZ
BLC2425M10LS500P/SOT1250/TRAYDP
Ampleon USA Inc.
2 $137.41
Tray ActiveLDMOS (Dual), Common Source2.4GHz ~ 2.5GHz14.5dB32 V4.2µA-20 mA500W65 VSOT1250-1SOT1250-1
BLF571,112
BLF571,112
RF MOSFET LDMOS 50V SOT467C
Ampleon USA Inc.
4 $147.21
Tray ActiveLDMOS225MHz27.5dB50 V3.6A-50 mA20W110 VSOT-467CSOT467C
BLF642,112
BLF642,112
RF MOSFET LDMOS 32V SOT467C
Ampleon USA Inc.
2 $160.84
Tray ActiveLDMOS1.3GHz19dB32 V--200 mA35W65 VSOT-467CSOT467C
BLF974PU
BLF974PU
BLF974P/SOT539/TRAY
Ampleon USA Inc.
5 $175.85
Tray ActiveLDMOS (Dual), Common Source700MHz25.7dB50 V1.4µA-50 mA500W108 VSOT-539ASOT539A
BLF645,112
BLF645,112
RF FET LDMOS 65V 16DB SOT540A
Ampleon USA Inc.
6 $181.75
Tray ActiveLDMOS (Dual), Common Source1.3GHz16.5dB32 V32A-900 mA100W65 VSOT-540ALDMOST
BLF188XRGJ
BLF188XRGJ
RF FET LDMOS 135V 24DB SOT1248C
Ampleon USA Inc.
4 $194.89
Tape & Reel (TR) ActiveLDMOS (Dual), Common Source108MHz24.4dB50 V--40 mA1400W135 VSOT-1248CCDFM4
BLF188XRSU
BLF188XRSU
RF FET LDMOS 135V 24.4DB SOT539B
Ampleon USA Inc.
6 $197.74
Tray ActiveLDMOS (Dual), Common Source108MHz24.4dB50 V--40 mA1400W135 VSOT-539BSOT539B

About RF FETs & RF MOSFETs

What are RF FETs & RF MOSFETs?

RF FETs

Field-effect transistors (FETs) are a class of transistors that control electrical behavior using an electric field. They are pivotal in amplifying or switching electronic signals. Among the various types of FETs, RF FETs (Radio Frequency Field-effect Transistors) are specialized for high-frequency applications. RF FETs are designed to operate efficiently at radio frequencies, typically ranging from a few megahertz (MHz) to several gigahertz (GHz). These transistors are crucial in amplifying weak RF signals, ensuring minimal distortion and high efficiency in communication systems.

RF FETs function by utilizing the electric field to control the conductivity of a channel in a semiconductor material. When a voltage is applied to the gate terminal, it modulates the current flow between the source and drain terminals, allowing for precise control of high-frequency signals. Their ability to handle high power levels and frequencies makes them indispensable in modern RF applications.

RF MOSFETs

MOSFETs, or Metal-Oxide-Semiconductor Field-Effect Transistors, are a type of transistor used for amplifying or switching electronic signals. They are fundamental components in modern electronics, offering high efficiency and fast switching capabilities. RF MOSFETs, a specialized subset of MOSFETs, are designed to operate at radio frequencies, typically ranging from 3 kHz to 300 GHz. These components are crucial in applications requiring high-frequency signal amplification and modulation, such as in communication systems. RF MOSFETs work by controlling the voltage and current flow between the source and drain terminals, with the gate terminal modulating the flow based on the input signal. Their ability to handle high power levels and frequencies makes them indispensable in RF applications.

Types of RF FETs

MOSFETs (Metal-Oxide-Semiconductor FETs)

MOSFETs are widely used in RF applications due to their high input impedance and fast switching capabilities. They are ideal for low to medium power applications and are commonly found in RF amplifiers and oscillators. Their ability to operate at high frequencies with minimal power loss makes them a popular choice in consumer electronics and communication devices.

GaN FETs (Gallium Nitride FETs)

GaN FETs are known for their high efficiency and power density, making them suitable for high-power RF applications. They are often used in radar systems, satellite communications, and wireless infrastructure. GaN FETs can operate at higher voltages and temperatures compared to traditional silicon-based FETs, providing superior performance in demanding environments.

SiC FETs (Silicon Carbide FETs)

SiC FETs offer excellent thermal conductivity and high breakdown voltage, making them ideal for high-power and high-frequency applications. They are commonly used in RF power amplifiers and industrial RF heating systems. SiC FETs provide robust performance in harsh conditions, ensuring reliability and longevity in critical applications.

Types of RF MOSFETs

1. LDMOS (Laterally Diffused Metal Oxide Semiconductor)

LDMOS transistors are widely used in RF applications due to their high power efficiency and robustness. They are particularly favored in base station amplifiers for cellular networks and broadcast transmitters. LDMOS devices are known for their linearity and ability to handle high power levels, making them ideal for applications requiring consistent performance over a wide frequency range.

2. GaN (Gallium Nitride) RF MOSFETs

GaN RF MOSFETs are renowned for their high electron mobility and thermal conductivity, allowing them to operate at higher voltages and temperatures compared to silicon-based transistors. These characteristics make GaN devices suitable for high-frequency applications such as satellite communications, radar systems, and point-to-point microwave links. Their efficiency and power density are unmatched, providing significant advantages in compact and high-performance designs.

3. SiC (Silicon Carbide) RF MOSFETs

SiC RF MOSFETs offer excellent thermal stability and high breakdown voltage, making them suitable for high-power RF applications. They are often used in industrial RF heating, power amplifiers, and other applications where high efficiency and reliability are paramount. SiC devices can operate at higher temperatures, reducing the need for extensive cooling systems and enhancing overall system efficiency.

How to choose RF FETs?

When selecting RF FETs, several key parameters must be considered to ensure optimal performance:

  • Frequency Range: Choose an RF FET that can operate efficiently within the desired frequency range of your application.
  • Power Handling: Ensure the FET can handle the required power levels without degradation.
  • Efficiency: Look for FETs with high efficiency to minimize power loss and heat generation.
  • Thermal Management: Consider the thermal characteristics and cooling requirements of the FET.
  • Reliability: Evaluate the supplier's reputation and product reliability through reviews and performance data.

Environmental factors such as temperature, humidity, and potential exposure to harsh conditions should also be considered. Installation requirements, including mounting and cooling solutions, must be assessed to ensure the FET operates within its specified limits.

How to choose RF MOSFETs?

When selecting RF MOSFETs, several key parameters must be considered to ensure optimal performance:

  • Frequency Range: Ensure the MOSFET can handle the desired frequency range of your application.
  • Power Output: Choose a device that can deliver the required power levels without compromising efficiency.
  • Thermal Management: Evaluate the thermal characteristics to ensure the device can operate within the desired temperature range.
  • Linearity: Consider the linearity of the MOSFET to maintain signal integrity, especially in communication applications.
  • Reliability: Assess the reliability and quality of the MOSFET by reviewing supplier certifications and customer reviews.

Environmental factors such as humidity, temperature, and potential exposure to corrosive elements should also be considered. Installation requirements, including mounting and cooling solutions, must be evaluated to ensure compatibility with the overall system design.

Applications of RF FETs & RF MOSFETs

Radio Frequency Field Effect Transistors (RF FETs) and Radio Frequency Metal-Oxide-Semiconductor Field-Effect Transistors (RF MOSFETs) are pivotal components in the realm of discrete semiconductor products. These devices are engineered to amplify or switch electronic signals in the radio frequency (RF) spectrum, typically ranging from 3 kHz to 300 GHz. Their unique properties make them indispensable across a variety of industries, each leveraging their capabilities to enhance communication, control, and efficiency.

Applications of RF FETs & RF MOSFETs

1. Telecommunications

In the telecommunications industry, RF FETs and RF MOSFETs are integral to the development of mobile phones, satellite communication systems, and wireless networking equipment. These components are used to amplify signals, ensuring clear and reliable communication over long distances. They are also crucial in the design of base stations and repeaters, where they help in boosting signal strength and maintaining the integrity of data transmission.

2. Aerospace and Defense

The aerospace and defense sectors utilize RF FETs and RF MOSFETs in radar systems, electronic warfare, and communication devices. These components are essential for detecting and tracking objects, as well as for secure communication in challenging environments. Their ability to operate at high frequencies and withstand extreme conditions makes them ideal for military applications, where reliability and precision are paramount.

3. Automotive Industry

In the automotive industry, RF FETs and RF MOSFETs are employed in advanced driver-assistance systems (ADAS), vehicle-to-everything (V2X) communication, and infotainment systems. They facilitate the transmission and reception of RF signals, enabling features such as adaptive cruise control, collision avoidance, and seamless connectivity between vehicles and infrastructure. These components contribute to the safety and convenience of modern vehicles.

4. Consumer Electronics

Consumer electronics, including televisions, radios, and smart home devices, benefit from the use of RF FETs and RF MOSFETs. These components are used to enhance signal reception and processing, ensuring high-quality audio and video output. In smart home devices, they enable wireless communication between various gadgets, contributing to the seamless integration of technology in everyday life.

5. Medical Equipment

In the medical field, RF FETs and RF MOSFETs are utilized in imaging systems, such as MRI and ultrasound machines, as well as in wireless medical devices. They play a crucial role in signal amplification and processing, allowing for precise imaging and real-time data transmission. These components help in improving diagnostic accuracy and patient monitoring, ultimately enhancing healthcare outcomes.

In conclusion, RF FETs and RF MOSFETs are versatile components that find applications across diverse industries. Their ability to handle high-frequency signals and provide reliable performance makes them a cornerstone in the advancement of technology and communication systems.