Transistors - FETs, MOSFETs - Arrays

Category Introduction

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.

Product List

5322 Items

PDF	Mfr Part #	Quantity Available	UnitPrice	RFQ	Series	Packaging	Product Status	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	DF11MR12W1M1B11BPSA1 MOSFET MOD 1200V 50A Infineon Technologies	3	$156.49		CoolSiC™+	Tray	Last Time Buy	2 N-Channel (Dual)	Silicon Carbide (SiC)	1200V (1.2kV)	50A (Tj)	22.5mOhm @ 50A, 15V	5.55V @ 20mA	124nC @ 15V	3680pF @ 800V	20mW	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1BM-2
	TPD3215M GANFET 2N-CH 600V 70A MODULE Transphorm	3	$171.05			Bulk	Obsolete	2 N-Channel (Half Bridge)	GaNFET (Gallium Nitride)	600V	70A (Tc)	34mOhm @ 30A, 8V	-	28nC @ 8V	2260pF @ 100V	470W	-40°C ~ 150°C (TJ)	Through Hole	Module	Module
	MSCSM120AM16CT1AG PM-MOSFET-SIC-SBD~-SP1F Microchip Technology	5	$234.46			Tube	Active	2 N Channel (Phase Leg)	Silicon Carbide (SiC)	1200V (1.2kV)	173A (Tc)	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	745W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP1F
	MSCM20XM16F4G PM-MOSFET-FREDFET-7-SP4 Microchip Technology	2	$243.54			Tube	Active	-	-	200V	77A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	SP4
	MSCC60AM23C4AG PM-MOSFET-COOLMOS-SBD-SP4 Microchip Technology	3	$260.47			Tube	Active	2 N-Channel	Standard	600V	81A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	SP4
	F415MR12W2M1B76BOMA1 LOW POWER EASY AG-EASY2B-2 Infineon Technologies	5	$276.53		EasyPACK™ CoolSiC™	Tray	Last Time Buy	4 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	75A (Tj)	15mOhm @ 75A, 15V	5.55V @ 30mA	186nC @ 15V	5.52nF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B-2
	F411MR12W2M1B76BOMA1 LOW POWER EASY AG-EASY2B-2 Infineon Technologies	2	$369.98		EasyPACK™ CoolSiC™	Tray	Last Time Buy	4 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	100A (Tj)	11.3mOhm @ 100A, 15V	5.55V @ 40mA	248nC @ 15V	7.36nF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	AG-EASY1B-2
	APTMC120AM25CT3AG MOSFET 2N-CH 1200V 105A SP3F Microchip Technology	4	$458.74			Bulk	Active	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	113A (Tc)	25mOhm @ 80A, 20V	2.2V @ 4mA (Typ)	197nC @ 20V	3800pF @ 1000V	500W	-40°C ~ 150°C (TJ)	Chassis Mount	SP3	SP3
	MSCSM120AM042CT6AG PM-MOSFET-SIC-SBD~-SP6C Microchip Technology	3	$876.43			Tube	Active	2 N Channel (Phase Leg)	Silicon Carbide (SiC)	1200V (1.2kV)	495A (Tc)	5.2mOhm @ 240A, 20V	2.8V @ 6mA	1392nC @ 20V	18.1pF @ 1000V	2.031kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	SP6C
	MSCSM70AM025CD3AG PM-MOSFET-SIC-SBD~-D3 Microchip Technology	2	$925.21			Box	Active	-	-	700V	538A (Tc)	-	-	-	-	-	-	Chassis Mount	Module	D3
	EAB450M12XM3 450A 1200V SIC HALF-BRIDGE MODUL Wolfspeed, Inc.	2	$1,109.20			Box	Active	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	450A (Tc)	3.7mOhm @ 450A, 15V	3.6V @ 132mA	1330nC @ 15V	38000pF @ 800V	50mW	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
	2N7002KDW-AU_R1_000A1 60V N-CHANNEL ENHANCEMENT MODE M Panjit International Inc.	2,902	$0.32			Tape & Reel (TR)	Active	2 N-Channel (Dual)	Standard	60V	250mA (Ta)	3Ohm @ 500mA, 10V	2.5V @ 250µA	0.8nC @ 5V	35pF @ 25V	350mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
	FDS6900AS SMALL SIGNAL FIELD-EFFECT TRANSI Fairchild Semiconductor	649	$0.54		PowerTrench®, SyncFET™	Bulk	Active	2 N-Channel (Dual)	Logic Level Gate	30V	6.9A, 8.2A	27mOhm @ 6.9A, 10V	3V @ 250µA	15nC @ 10V	600pF @ 15V	900mW	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
	BSC150N03LDGATMA1 MOSFET 2N-CH 30V 8A 8TDSON Infineon Technologies	349	$1.18		OptiMOS™	Tape & Reel (TR)	Active	2 N-Channel (Dual)	Logic Level Gate	30V	8A	15mOhm @ 20A, 10V	2.2V @ 250µA	13.2nC @ 10V	1100pF @ 15V	26W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
	DF23MR12W1M1B11BOMA1244 DF23MR12 - INSULATED GATE BIPOLA Infineon Technologies	10	$82.80			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
	FD1400R12IP4DBOSA1 FD1400R12 - INSULATED GATE BIPOL Infineon Technologies	3	$618.62			Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
	GE12047BCA3 1200V 475A SiC Dual Module General Electric	2	$1,914.13		SiC Power	Box	Active	2 Independent	Silicon Carbide (SiC)	1200V (1.2kV)	475A	4.4mOhm @ 475A, 20V	4.5V @ 160mA	1248nC @ 18V	29.3nF @ 600V	1250W	-55°C ~ 150°C (Tc)	Chassis Mount	Module	-
	GE12047CCA3 1200V 475A SIC HALF-BRIDGE MODUL General Electric	2	$1,884.51		SiC Power	Box	Active	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1200V (1.2kV)	475A	4.4mOhm @ 475A, 20V	4.5V @ 160mA	1248nC @ 18V	29.3nF @ 600V	1250W	-55°C ~ 150°C (Tc)	Chassis Mount	Module	-
	GE17042CCA3 1700V 425A SIC HALF-BRIDGE MODUL General Electric	2	$2,766.02			Bulk	Active	2 N-Channel (Half Bridge)	Silicon Carbide (SiC)	1700V (1.7kV)	425A (Tc)	4.45mOhm @ 425A, 20V	4.5V @ 160mA	18V	29100pF @ 900V	1250W	175°C (TJ)	Chassis Mount	Module	-
	GE17042BCA3 1700V 425A SIC DUAL MODULE General Electric	2	$2,768.73			Bulk	Active	2 N-Channel (Dual)	Silicon Carbide (SiC)	1700V (1.7kV)	425A (Tc)	4.45mOhm @ 425A, 20V	4.5V @ 160mA	18V	29100pF @ 900V	1250W	175°C (TJ)	Chassis Mount	Module	-