Transistors - FETs, MOSFETs - Arrays

Category Introduction

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.

Product List

5322 Items
PDF Mfr Part # Quantity
Available
UnitPrice RFQ Series Packaging Product StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
CSD87384MT
CSD87384MT
MOSFET 2N-CH 30V 30A 5PTAB
Texas Instruments
176 $2.16
NexFET™ Tape & Reel (TR) Active2 N-Channel (Half Bridge)Logic Level Gate30V30A7.7mOhm @ 25A, 8V1.9V @ 250µA9.2nC @ 4.5V1150pF @ 15V8W-55°C ~ 150°C (TJ)Surface Mount5-LGA5-PTAB (5x3.5)
ALD114904SAL
ALD114904SAL
MOSFET 2N-CH 10.6V 8SOIC
Advanced Linear Devices Inc.
95 $4.96
EPAD® Tube Active2 N-Channel (Dual) Matched PairDepletion Mode10.6V12mA, 3mA500Ohm @ 3.6V360mV @ 1µA-2.5pF @ 5V500mW0°C ~ 70°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
ALD110800PCL
ALD110800PCL
MOSFET 4N-CH 10.6V 16DIP
Advanced Linear Devices Inc.
68 $6.00
EPAD®, Zero Threshold™ Tube Active4 N-Channel, Matched PairStandard10.6V-500Ohm @ 4V20mV @ 1µA-2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole16-DIP (0.300", 7.62mm)16-PDIP
APTC60DSKM24T3G
APTC60DSKM24T3G
MOSFET 2N-CH 600V 95A SP3
Microchip Technology
6 $130.28
CoolMOS™ Tray Active2 N Channel (Dual Buck Chopper)Super Junction600V95A24mOhm @ 47.5A, 10V3.9V @ 5mA300nC @ 10V14400pF @ 25V462W-40°C ~ 150°C (TJ)Chassis MountSP3SP3
MCB40P1200LB-TUB
MCB40P1200LB-TUB
POWER MOSFET
IXYS
5 $219.08
CoolMOS™ Tube Active2 N-Channel (Dual) Common SourceSilicon Carbide (SiC)1200V (1.2kV)58A------Surface Mount9-SMD Power ModuleSMPD
MSCM20AM058G
MSCM20AM058G
PM-MOSFET-FREDFET-5-LP8
Microchip Technology
2 $418.96
Box Active2 N Channel (Phase Leg)Standard200V280A (Tc)------Chassis MountModuleLP8
IPB13N03LBG
IPB13N03LBG
OPTLMOS N-CHANNEL POWER MOSFET
Infineon Technologies
2,028 $0.36
Bulk Active-------------
IRFU220S2497
IRFU220S2497
4.6A 200V 0.800 OHM N-CHANNEL
Harris Corporation
619 $0.41
Bulk Active-------------
MTB6N60ET4
MTB6N60ET4
6A, 600V, 1.2OHM, N-CHANNEL
onsemi
100 $0.59
Bulk Active-------------
MPIC2117P
MPIC2117P
BUFFER/INVERTER BASED MOSFET DRI
onsemi
1,425 $0.60
Bulk Active-------------
FQPF6N50C
FQPF6N50C
3.6A, 500V, N-CHANNEL, MOSFET
Fairchild Semiconductor
1,457 $0.66
Bulk Active-------------
FDSS2407S_B82086
FDSS2407S_B82086
3.3A, 62V, 0.11OHM, 2-ELEMENT,
Fairchild Semiconductor
626 $0.69
PowerTrench® Bulk Active2 N-Channel (Dual)Logic Level Gate62V3.3A (Ta)110mOhm @ 3.3A, 10V3V @ 250µA4.3nC @ 5V300pF @ 15V2.27W (Ta)-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
2SK2631-TL-E
2SK2631-TL-E
POWER MOSFET
Sanyo
863 $0.74
Bulk Active-------------
IPA60R600E6
IPA60R600E6
600V, 0.6OHM, N-CHANNEL, MOSFET
Infineon Technologies
630 $0.79
Bulk Active-------------
2SK3704-CB11
2SK3704-CB11
N-CHANNEL MOSFET
onsemi
942 $0.81
Bulk Active-------------
2SJ325-Z-E1-AZ
2SJ325-Z-E1-AZ
P-CHANNEL POWER SWITCHING MOSFET
Renesas Electronics America Inc
285 $0.85
Bulk Active-------------
RF1S530SM9AS2457
RF1S530SM9AS2457
N-CHANNEL, POWER MOSFET
Harris Corporation
687 $0.87
Bulk Active-------------
NTE4007
NTE4007
IC-CMOS DUAL COMPL. PAIR
NTE Electronics, Inc
307 $0.90
Bag Active3 N and 3 P-ChannelStandard------500mW-55°C ~ 125°C---
RFP40N10S5001
RFP40N10S5001
40A, 100V, 0.04OHM, N CHANNEL, M
Harris Corporation
846 $0.98
Bulk Active-------------
SP001017058
SP001017058
IPP60R380P6 - 600V N-CHANNEL
Infineon Technologies
531 $1.04
Bulk Active-------------