Transistors - FETs, MOSFETs - Arrays

Category Introduction

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.

Product List

5322 Items
PDF Mfr Part # Quantity
Available
UnitPrice RFQ Series Packaging Product StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
MSCSM120AM08CT3AG
MSCSM120AM08CT3AG
PM-MOSFET-SIC-SBD~-SP3F
Microchip Technology
2 $528.07
Tube Active2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)337A (Tc)7.8mOhm @ 160A, 20V2.8V @ 4mA928nC @ 20V12.08pF @ 1000V1.409kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
CSD83325LT
CSD83325LT
MOSFET 2N-CH 12V 6PICOSTAR
Texas Instruments
385 $1.25
NexFET™ Tape & Reel (TR) Active2 N-Channel (Dual) Common DrainStandard12V--1.25V @ 250µA10.9nC @ 4.5V-2.3W-55°C ~ 150°C (TJ)Surface Mount6-XFBGA6-PicoStar
CSD87333Q3DT
CSD87333Q3DT
MOSFET 2N-CH 30V 15A 8VSON
Texas Instruments
436 $1.57
NexFET™ Tape & Reel (TR) Active2 N-Channel (Dual) AsymmetricalLogic Level Gate, 5V Drive30V15A14.3mOhm @ 4A, 8V1.2V @ 250µA4.6nC @ 4.5V662pF @ 15V6W125°C (TJ)Surface Mount8-PowerTDFN8-VSON (3.3x3.3)
ALD110900PAL
ALD110900PAL
MOSFET 2N-CH 10.6V 8DIP
Advanced Linear Devices Inc.
148 $5.53
EPAD®, Zero Threshold™ Tube Active2 N-Channel (Dual) Matched PairStandard10.6V-500Ohm @ 4V20mV @ 1µA-2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
ALD212900PAL
ALD212900PAL
MOSFET 2N-CH 10.6V 0.08A 8DIP
Advanced Linear Devices Inc.
70 $6.34
EPAD®, Zero Threshold™ Tube Active2 N-Channel (Dual) Matched PairLogic Level Gate10.6V80mA14Ohm20mV @ 20µA-30pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
ALD1102SAL
ALD1102SAL
MOSFET 2P-CH 10.6V 8SOIC
Advanced Linear Devices Inc.
137 $6.69
Tube Active2 P-Channel (Dual) Matched PairStandard10.6V-270Ohm @ 5V1.2V @ 10µA-10pF @ 5V500mW0°C ~ 70°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
ALD1101SAL
ALD1101SAL
MOSFET 2N-CH 10.6V 8SOIC
Advanced Linear Devices Inc.
49 $6.62
Tube Active2 N-Channel (Dual) Matched PairStandard10.6V-75Ohm @ 5V1V @ 10µA--500mW0°C ~ 70°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
ALD210800SCL
ALD210800SCL
MOSFET 4N-CH 10.6V 0.08A 16SOIC
Advanced Linear Devices Inc.
133 $6.94
EPAD®, Zero Threshold™ Tube Active4 N-Channel, Matched PairLogic Level Gate10.6V80mA25Ohm20mV @ 10µA-15pF @ 5V500mW0°C ~ 70°C (TJ)Surface Mount16-SOIC (0.154", 3.90mm Width)16-SOIC
ALD110900APAL
ALD110900APAL
MOSFET 2N-CH 10.6V 8DIP
Advanced Linear Devices Inc.
92 $7.02
EPAD®, Zero Threshold™ Tube Active2 N-Channel (Dual) Matched PairStandard10.6V-500Ohm @ 4V10mV @ 1µA-2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
ALD1102PAL
ALD1102PAL
MOSFET 2P-CH 10.6V 8DIP
Advanced Linear Devices Inc.
134 $7.06
Tube Active2 P-Channel (Dual) Matched PairStandard10.6V-270Ohm @ 5V1.2V @ 10µA-10pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
ALD110800APCL
ALD110800APCL
MOSFET 4N-CH 10.6V 16DIP
Advanced Linear Devices Inc.
49 $8.24
EPAD®, Zero Threshold™ Tube Active4 N-Channel, Matched PairStandard10.6V-500Ohm @ 4V10mV @ 1µA-2.5pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole16-DIP (0.300", 7.62mm)16-PDIP
ALD210800APCL
ALD210800APCL
MOSFET 4N-CH 10.6V 0.08A 16DIP
Advanced Linear Devices Inc.
106 $8.27
EPAD®, Zero Threshold™ Tube Active4 N-Channel, Matched PairLogic Level Gate10.6V80mA25Ohm10mV @ 10µA-15pF @ 5V500mW0°C ~ 70°C (TJ)Through Hole16-DIP (0.300", 7.62mm)16-PDIP
ALD310700APCL
ALD310700APCL
MOSFET 4 P-CH 8V 16DIP
Advanced Linear Devices Inc.
31 $8.38
EPAD®, Zero Threshold™ Tube Active4 P-Channel, Matched PairStandard8V--20mV @ 1µA-2.5pF @ 5V500mW0°C ~ 70°CThrough Hole16-DIP (0.300", 7.62mm)16-PDIP
APTM50AM38STG
APTM50AM38STG
MOSFET 2N-CH 500V 90A SP4
Microchip Technology
6 $174.80
Bulk Active2 N-Channel (Half Bridge)Standard500V90A45mOhm @ 45A, 10V5V @ 5mA246nC @ 10V11200pF @ 25V694W-40°C ~ 150°C (TJ)Chassis MountSP4SP4
MSCSM70AM10CT3AG
MSCSM70AM10CT3AG
PM-MOSFET-SIC-SBD~-SP3F
Microchip Technology
2 $268.55
Tube Active2 N Channel (Phase Leg)Silicon Carbide (SiC)700V241A (Tc)9.5mOhm @ 80A, 20V2.4V @ 8mA430nC @ 20V9000pF @ 700V690W (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP3F
VMM650-01F
VMM650-01F
MOSFET 2N-CH 100V 680A Y3-LI
IXYS
2 $356.95
HiPerFET™ Bulk Active2 N-Channel (Dual)Standard100V680A2.2mOhm @ 500A, 10V4V @ 30mA1440nC @ 10V---40°C ~ 150°C (TJ)Chassis MountY3-LiY3-Li
MSCSM120AM042CT6LIAG
MSCSM120AM042CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI
Microchip Technology
2 $959.81
Tube Active2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)495A (Tc)5.2mOhm @ 240A, 20V2.8V @ 6mA1392nC @ 20V18100pF @ 1kV2.031kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP6C LI
MSCSM120AM042CD3AG
MSCSM120AM042CD3AG
PM-MOSFET-SIC-SBD~-D3
Microchip Technology
2 $977.82
Box Active2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)495A (Tc)5.2mOhm @ 240A, 20V2.8V @ 6mA1392nC @ 20V18.1pF @ 1000V2.031kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleD3
MSCSM120TAM11CTPAG
MSCSM120TAM11CTPAG
PM-MOSFET-SIC-SBD~-SP6P
Microchip Technology
2 $1,132.72
Tube Active6 N-Channel (3-Phase Bridge)Silicon Carbide (SiC)1200V (1.2kV)251A (Tc)10.4mOhm @ 120A, 20V2.8V @ 3mA696nC @ 20V9060pF @ 1000V1.042kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP6-P
MSCSM120AM03CT6LIAG
MSCSM120AM03CT6LIAG
PM-MOSFET-SIC-SBD~-SP6C LI
Microchip Technology
2 $1,376.54
Tube Active2 N Channel (Phase Leg)Silicon Carbide (SiC)1200V (1.2kV)805A (Tc)3.1mOhm @ 400A, 20V2.8V @ 10mA2320nC @ 20V30200pF @ 1kV3.215kW (Tc)-40°C ~ 175°C (TJ)Chassis MountModuleSP6C LI