Transistors - FETs, MOSFETs - Arrays

Category Introduction

Field-effect transistors (FET) are electronic devices which use an electric field to control the flow of current. Application of a voltage to the gate terminal alters the conductivity between the drain and source terminals. FETs are also known as unipolar transistors since they involve single-carrier-type operation. That is, FETs use electrons or holes as charge carriers in their operation, but not both. Field effect transistors generally display very high input impedance at low frequencies.

Product List

5322 Items
PDF Mfr Part # Quantity
Available
UnitPrice RFQ Series Packaging Product StatusFET TypeFET FeatureDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsInput Capacitance (Ciss) (Max) @ VdsPower - MaxOperating TemperatureMounting TypePackage / CaseSupplier Device Package
EPC2106
EPC2106
GANFET TRANS SYM 100V BUMPED DIE
EPC
333 $1.78
eGaN® Tape & Reel (TR) Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)100V1.7A70mOhm @ 2A, 5V2.5V @ 600µA0.73nC @ 5V75pF @ 50V--40°C ~ 150°C (TJ)Surface MountDieDie
EPC2110
EPC2110
GANFET 2NCH 120V 3.4A DIE
EPC
256 $2.32
eGaN® Tape & Reel (TR) Active2 N-Channel (Dual) Common SourceGaNFET (Gallium Nitride)120V3.4A60mOhm @ 4A, 5V2.5V @ 700µA0.8nC @ 5V80pF @ 60V--40°C ~ 150°C (TJ)-DieDie
EPC2104
EPC2104
GAN TRANS SYMMETRICAL HALF BRIDG
EPC
6 $8.89
eGaN® Tape & Reel (TR) Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)100V23A6.3mOhm @ 20A, 5V2.5V @ 5.5mA7nC @ 5V800pF @ 50V--40°C ~ 150°C (TJ)Surface MountDieDie
EPC2102
EPC2102
GAN TRANS SYMMETRICAL HALF BRIDG
EPC
37 $9.08
eGaN® Tape & Reel (TR) Active2 N-Channel (Half Bridge)GaNFET (Gallium Nitride)60V23A4.4mOhm @ 20A, 5V2.5V @ 7mA6.8nC @ 5V830pF @ 30V--40°C ~ 150°C (TJ)Surface MountDieDie
NTJD5121NT1G
NTJD5121NT1G
MOSFET 2N-CH 60V 295MA SOT363
onsemi
2,137 $0.37
Tape & Reel (TR) Active2 N-Channel (Dual)Logic Level Gate60V295mA1.6Ohm @ 500mA, 10V2.5V @ 250µA0.9nC @ 4.5V26pF @ 20V250mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SC-88/SC70-6/SOT-363
SSM6N37FU,LF
SSM6N37FU,LF
MOSFET 2 N-CHANNEL 20V 250MA US6
Toshiba Semiconductor and Storage
1,238 $0.39
Tape & Reel (TR) Active2 N-Channel (Dual)Logic Level Gate, 1.5V Drive20V250mA (Ta)2.2Ohm @ 100mA, 4.5V1V @ 1mA-12pF @ 10V300mW150°CSurface Mount6-TSSOP, SC-88, SOT-363US6
NTJD4401NT1G
NTJD4401NT1G
MOSFET 2N-CH 20V 630MA SOT363
onsemi
220 $0.44
Tape & Reel (TR) Active2 N-Channel (Dual)Logic Level Gate20V630mA375mOhm @ 630mA, 4.5V1.5V @ 250µA3nC @ 4.5V46pF @ 20V270mW-55°C ~ 150°C (TJ)Surface Mount6-TSSOP, SC-88, SOT-363SC-88/SC70-6/SOT-363
SIL2308-TP
SIL2308-TP
N/P-CHANNEL MOSFETSOT23-6L
Micro Commercial Co
977 $0.38
Tape & Reel (TR) ActiveN and P-ChannelStandard20V5A, 4A38mOhm @ 4.5A, 4.5V, 90mOhm @ 500mA, 4.5V1V @ 250µA11nC @ 4.5V, 12nC @ 2.5V800pF, 405pF @ 8V, 10V--55°C ~ 150°C (TJ)Surface MountSOT-23-6SOT-23-6L
DMP3085LSD-13
DMP3085LSD-13
MOSFET 2P-CH 30V 3.9A 8SO
Diodes Incorporated
453 $0.39
Tape & Reel (TR) Active2 P-Channel (Dual)Logic Level Gate30V3.9A70mOhm @ 5.3A, 10V3V @ 250µA11nC @ 10V563pF @ 25V1.1W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SO
BSD840NH6327XTSA1
BSD840NH6327XTSA1
MOSFET 2N-CH 20V 0.88A SOT363
Infineon Technologies
222 $0.42
OptiMOS™ Tape & Reel (TR) Active2 N-Channel (Dual)Logic Level Gate20V880mA400mOhm @ 880mA, 2.5V750mV @ 1.6µA0.26nC @ 2.5V78pF @ 10V500mW-55°C ~ 150°C (TJ)Surface Mount6-VSSOP, SC-88, SOT-363PG-SOT363-PO
SSM6N58NU,LF
SSM6N58NU,LF
MOSFET 2N-CH 30V 4A UDFN6
Toshiba Semiconductor and Storage
367 $0.47
Tape & Reel (TR) Active2 N-Channel (Dual)Logic Level Gate, 1.8V Drive30V4A84mOhm @ 2A, 4.5V1V @ 1mA1.8nC @ 4.5V129pF @ 15V1W150°C (TJ)Surface Mount6-WDFN Exposed Pad6-UDFN (2x2)
DMC31D5UDJ-7
DMC31D5UDJ-7
MOSFET N/P-CH 30V SOT963
Diodes Incorporated
1,053 $0.46
Tape & Reel (TR) ActiveN and P-ChannelLogic Level Gate30V220mA, 200mA1.5Ohm @ 100mA, 4.5V1V @ 250µA0.38nC @ 4.5V22.6pF @ 15V350mW-55°C ~ 150°C (TJ)Surface MountSOT-963SOT-963
DMP2004VK-7
DMP2004VK-7
MOSFET 2P-CH 20V 0.53A SOT-563
Diodes Incorporated
1,216 $0.49
Tape & Reel (TR) Active2 P-Channel (Dual)Logic Level Gate20V530mA900mOhm @ 430mA, 4.5V1V @ 250µA-175pF @ 16V400mW-65°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563
DMN2004DMK-7
DMN2004DMK-7
MOSFET 2N-CH 20V 0.54A SOT-26
Diodes Incorporated
411 $0.45
Tape & Reel (TR) Active2 N-Channel (Dual)Logic Level Gate20V540mA550mOhm @ 540mA, 4.5V1V @ 250µA-150pF @ 16V225mW-65°C ~ 150°C (TJ)Surface MountSOT-23-6SOT-26
AO4629
AO4629
MOSFET N/P-CH 30V 6A/5.5A 8SOIC
Alpha & Omega Semiconductor Inc.
238 $0.46
Tape & Reel (TR) ActiveN and P-Channel, Common DrainLogic Level Gate30V6A, 5.5A30mOhm @ 6A, 10V2.4V @ 250µA6.3nC @ 10V310pF @ 15V2W-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
DMG6968UDM-7
DMG6968UDM-7
MOSFET 2N-CH 20V 6.5A SOT-26
Diodes Incorporated
729 $0.51
Tape & Reel (TR) Active2 N-Channel (Dual) Common DrainLogic Level Gate20V6.5A24mOhm @ 6.5A, 4.5V900mV @ 250µA8.8nC @ 4.5V143pF @ 10V850mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6SOT-26
AO6604
AO6604
MOSFET N/P-CH 20V 6-TSOP
Alpha & Omega Semiconductor Inc.
132 $0.54
Tape & Reel (TR) ActiveN and P-Channel ComplementaryLogic Level Gate, 4.5V Drive20V3.4A, 2.5A65mOhm @ 3.4A, 4.5V1V @ 250µA3.8nC @ 4.5V320pF @ 10V1.1W-55°C ~ 150°C (TJ)Surface MountSC-74, SOT-4576-TSOP
FDY1002PZ
FDY1002PZ
MOSFET 2P-CH 20V 830MA SOT563F
onsemi
44 $0.55
PowerTrench® Tape & Reel (TR) Active2 P-Channel (Dual)Logic Level Gate20V830mA500mOhm @ 830mA, 4.5V1V @ 250µA3.1nC @ 4.5V135pF @ 10V446mW-55°C ~ 150°C (TJ)Surface MountSOT-563, SOT-666SOT-563F
DMG9926UDM-7
DMG9926UDM-7
MOSFET 2N-CH 20V 4.2A SOT-26
Diodes Incorporated
1,425 $0.54
Tape & Reel (TR) Active2 N-Channel (Dual) Common DrainLogic Level Gate20V4.2A28mOhm @ 8.2A, 4.5V900mV @ 250µA8.3nC @ 4.5V856pF @ 10V980mW-55°C ~ 150°C (TJ)Surface MountSOT-23-6SOT-26
DMN3032LFDBQ-7
DMN3032LFDBQ-7
MOSFET 2N-CH 30V 6.2A U-DFN2020
Diodes Incorporated
1,562 $0.60
Tape & Reel (TR) Active2 N-Channel (Dual)Standard30V6.2A30mOhm @ 5.8A, 10V2V @ 250µA10.6nC @ 10V500pF @ 15V1W-55°C ~ 150°C (TJ)Surface Mount6-UDFN Exposed PadU-DFN2020-6 (Type B)

About FET Arrays & MOSFET Arrays

What are FET Arrays & MOSFET Arrays?

FET Arrays

FET Arrays, or Field-Effect Transistor Arrays, are integrated circuits that house multiple FETs on a single chip. These components are pivotal in electronic circuits for amplifying or switching electronic signals. FETs operate by using an electric field to control the flow of current, making them voltage-controlled devices. This characteristic allows FET Arrays to offer high input impedance and low power consumption, making them ideal for various applications in modern electronics.

MOSFET Arrays

MOSFET Arrays, or Metal-Oxide-Semiconductor Field-Effect Transistor Arrays, are integrated circuits that house multiple MOSFETs on a single chip. These arrays are designed to amplify or switch electronic signals efficiently. Each MOSFET within the array operates by using an electric field to control the flow of current between the source and drain terminals, with the gate terminal acting as the control input. This configuration allows for high-speed switching and low power consumption, making MOSFET Arrays ideal for a variety of electronic applications.

Types of FET Arrays

MOSFET Arrays

MOSFET Arrays are the most common type of FET Arrays, known for their high efficiency and fast switching capabilities. They are used extensively in power management applications, where they help in regulating voltage and current levels. Their ability to handle high power and frequency makes them suitable for use in power amplifiers and motor control circuits.

JFET Arrays

JFET Arrays are known for their simplicity and high input impedance. They are typically used in low-noise applications such as audio amplifiers and RF circuits. The JFET's ability to operate with minimal noise makes it a preferred choice in sensitive signal processing applications.

IGBT Arrays

IGBT Arrays combine the characteristics of MOSFETs and BJTs, offering high efficiency and fast switching. They are primarily used in high-power applications such as inverters for electric vehicles and industrial motor drives. Their robustness and ability to handle high voltages make them ideal for these demanding environments.

Types of MOSFET Arrays

1. N-Channel MOSFET Arrays

N-Channel MOSFET Arrays are characterized by their ability to conduct when a positive voltage is applied to the gate terminal. These arrays are commonly used in applications requiring high-speed switching and low on-resistance, such as in power management and motor control systems.

2. P-Channel MOSFET Arrays

P-Channel MOSFET Arrays conduct when a negative voltage is applied to the gate terminal. They are typically used in applications where a negative voltage is preferred, such as in battery-powered devices and reverse polarity protection circuits.

3. Complementary MOSFET Arrays

Complementary MOSFET Arrays combine both N-Channel and P-Channel MOSFETs on a single chip. This configuration is ideal for creating push-pull amplifier circuits and other applications requiring complementary switching actions.

How to choose FET Arrays?

When selecting FET Arrays, several key parameters must be considered:

  • Voltage and Current Ratings: Ensure the FET Array can handle the maximum voltage and current levels of your application.
  • Switching Speed: Choose an array with the appropriate switching speed for your circuit's requirements.
  • Thermal Management: Consider the thermal characteristics and ensure adequate heat dissipation mechanisms are in place.
  • Package Type: Select a package that fits your design's space constraints and mounting requirements.

Evaluating product quality involves checking supplier certifications, reviewing datasheets for consistency, and considering customer reviews and industry reputation. Environmental factors such as temperature range and humidity should also be considered, along with installation requirements like PCB layout and soldering techniques.

How to choose MOSFET Arrays?

When selecting MOSFET Arrays, consider the following key parameters:

  • Voltage and Current Ratings: Ensure the array can handle the required voltage and current levels for your application.
  • On-Resistance (RDS(on)): Lower on-resistance results in less power loss and higher efficiency.
  • Switching Speed: Choose arrays with appropriate switching speeds to match your application's frequency requirements.
  • Thermal Management: Evaluate the thermal characteristics and ensure adequate heat dissipation mechanisms are in place.
  • Package Type: Consider the physical size and mounting style that best fits your design.

To evaluate product quality and reliability, review supplier datasheets, customer reviews, and industry certifications. Consider environmental factors such as temperature range and humidity, and ensure proper installation to prevent damage and ensure optimal performance.

Applications of FET Arrays & MOSFET Arrays

Field-Effect Transistor (FET) Arrays and Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Arrays are integral components in modern electronics, offering versatility and efficiency in various applications. These arrays consist of multiple FETs or MOSFETs integrated into a single package, providing compact solutions for complex circuit designs. Their unique characteristics make them suitable for a wide range of industries, each with specific applications and functions.

1. Consumer Electronics

In the consumer electronics industry, FET and MOSFET arrays are pivotal in the design of power management circuits for devices such as smartphones, tablets, and laptops. These arrays help in efficiently managing battery power, reducing energy consumption, and enhancing the overall performance of the devices. They are also used in audio amplifiers and switching applications, contributing to improved sound quality and device responsiveness.

2. Automotive Industry

The automotive sector leverages FET and MOSFET arrays for various applications, including electric vehicle (EV) powertrains, battery management systems, and advanced driver-assistance systems (ADAS). These arrays are crucial for controlling high-power loads, ensuring efficient energy conversion, and enhancing the safety and reliability of automotive electronics. Their ability to handle high voltages and currents makes them ideal for automotive applications.

3. Industrial Automation

In industrial automation, FET and MOSFET arrays are employed in motor control systems, robotics, and programmable logic controllers (PLCs). They facilitate precise control of motor speed and torque, contributing to the efficiency and accuracy of automated processes. Additionally, these arrays are used in power supply circuits, ensuring stable and reliable operation of industrial equipment.

4. Telecommunications

Telecommunications infrastructure relies on FET and MOSFET arrays for signal amplification, switching, and power regulation. These arrays are essential in base stations, network routers, and other communication devices, where they help maintain signal integrity and manage power distribution. Their high-speed switching capabilities and low power loss characteristics are vital for the seamless operation of telecommunication networks.

5. Renewable Energy Systems

In the renewable energy sector, FET and MOSFET arrays play a critical role in solar inverters, wind turbine controllers, and energy storage systems. They are used to convert and regulate power from renewable sources, ensuring efficient energy transfer and storage. Their robustness and efficiency in handling variable power levels make them indispensable in optimizing the performance of renewable energy systems.

Overall, FET and MOSFET arrays are versatile components that enhance the functionality and efficiency of electronic systems across various industries. Their integration into modern technology continues to drive innovation and improve the performance of electronic devices and systems.