PMIC - Gate Drivers

Category Introduction

Gate driver Power Management Integrated Circuits (PMICs) are devices that provide isolation, amplification, reference shifting, bootstrapping, or other functions necessary to interface signals from a control device in a power conversion application to the semiconductor devices (usually FETs or IGBTs) through which the power being controlled passes. The exact functions offered by any particular device vary, but correlate with the semiconductor configuration it is adapted to drive.

Product List

6187 Items

PDF	Mfr Part #	Quantity Available	UnitPrice	RFQ	Series	Packaging	Product Status	Driven Configuration	Channel Type	Number of Drivers	Gate Type	Voltage - Supply	Logic Voltage - VIL, VIH	Current - Peak Output (Source, Sink)	Input Type	High Side Voltage - Max (Bootstrap)	Rise / Fall Time (Typ)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
	TC4422CAT IC GATE DRVR LOW-SIDE TO220-5 Microchip Technology	186	$5.00			Tube	Active	Low-Side	Single	1	IGBT, N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	9A, 9A	Non-Inverting	-	60ns, 60ns	0°C ~ 150°C (TJ)	Through Hole	TO-220-5	TO-220-5
	MIC4467YWM IC GATE DRVR LOW-SIDE 16SOIC Microchip Technology	105	$5.06			Tube	Active	Low-Side	Independent	4	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.2A, 1.2A	Inverting	-	14ns, 13ns	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
	MAX4429ESA+ IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc./Maxim Integrated	138	$4.98			Tube	Active	Low-Side	Single	1	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	6A, 6A	Inverting	-	25ns, 25ns	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
	MIC4469YN IC GATE DRVR LOW-SIDE 14DIP Microchip Technology	93	$5.19			Tube	Active	Low-Side	Independent	4	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.2A, 1.2A	Inverting, Non-Inverting	-	14ns, 13ns	-40°C ~ 85°C (TA)	Through Hole	14-DIP (0.300", 7.62mm)	14-DIP
	MAX4426CSA+ IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc./Maxim Integrated	185	$5.32			Tube	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.5A, 1.5A	Inverting	-	20ns, 20ns	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
	MAX628CSA+ IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc./Maxim Integrated	101	$5.34			Tube	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	2A, 2A	Inverting, Non-Inverting	-	25ns, 20ns	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
	TC4467COE IC GATE DRVR LOW-SIDE 16SOIC Microchip Technology	80	$5.51			Tube	Active	Low-Side	Independent	4	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.2A, 1.2A	Inverting	-	15ns, 15ns	0°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
	TC4469EOE IC GATE DRVR LOW-SIDE 16SOIC Microchip Technology	58	$5.49			Tube	Active	Low-Side	Independent	4	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.2A, 1.2A	Inverting, Non-Inverting	-	15ns, 15ns	-40°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
	TC4469EPD IC GATE DRVR LOW-SIDE 14DIP Microchip Technology	177	$5.55			Tube	Active	Low-Side	Independent	4	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.2A, 1.2A	Inverting, Non-Inverting	-	15ns, 15ns	-40°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-PDIP
	ISL2111ARTZ IC GATE DRVR HALF-BRIDGE 10TDFN Renesas Electronics America Inc	141	$5.59			Tube	Active	Half-Bridge	Independent	2	N-Channel MOSFET	8V ~ 14V	1.4V, 2.2V	3A, 4A	Non-Inverting	114 V	9ns, 7.5ns	-40°C ~ 125°C (TJ)	Surface Mount	10-WDFN Exposed Pad	10-TDFN (4x4)
	LTC4441IS8-1#PBF IC GATE DRVR LOW-SIDE 8SOIC Analog Devices Inc.	37	$5.90			Tube	Active	Low-Side	Single	1	N-Channel MOSFET	5V ~ 25V	1.8V, 2V	6A, 6A	Non-Inverting	-	13ns, 8ns	-40°C ~ 125°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
	TC4627COE IC GATE DRVR HI/LOW SIDE 16SOIC Microchip Technology	152	$6.11			Tube	Active	High-Side or Low-Side	Single	1	N-Channel, P-Channel MOSFET	4V ~ 6V	0.8V, 2.4V	1.5A, 1.5A	Non-Inverting	-	33ns, 27ns	0°C ~ 70°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
	IR21844PBF IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	119	$6.09			Tube	Not For New Designs	Half-Bridge	Synchronous	2	IGBT, N-Channel MOSFET	10V ~ 20V	0.8V, 2.7V	1.9A, 2.3A	Non-Inverting	600 V	40ns, 20ns	-40°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-DIP
	MAX5063CASA+ IC GATE DRVR HALF-BRIDGE 8SOIC Analog Devices Inc./Maxim Integrated	83	$6.16			Tube	Active	Half-Bridge	Independent	2	N-Channel MOSFET	8V ~ 12.6V	0.8V, 2V	2A, 2A	Non-Inverting	125 V	65ns, 65ns	-40°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width) Exposed Pad	8-SOIC-EP
	MAX4427CPA+ IC GATE DRVR LOW-SIDE 8DIP Analog Devices Inc./Maxim Integrated	23	$6.15			Tube	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.5A, 1.5A	Non-Inverting	-	20ns, 20ns	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
	TC4627CPA IC GATE DRV HI-SIDE/LO-SIDE 8DIP Microchip Technology	6	$6.30			Tube	Active	High-Side or Low-Side	Single	1	N-Channel, P-Channel MOSFET	4V ~ 6V	0.8V, 2.4V	1.5A, 1.5A	Non-Inverting	-	33ns, 27ns	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
	MAX4428EPA+ IC GATE DRVR LOW-SIDE 8DIP Analog Devices Inc./Maxim Integrated	43	$6.62			Tube	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.5A, 1.5A	Inverting, Non-Inverting	-	20ns, 20ns	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
	MAX4427EPA+ IC GATE DRVR LOW-SIDE 8DIP Analog Devices Inc./Maxim Integrated	5	$6.51			Tube	Active	Low-Side	Independent	2	N-Channel, P-Channel MOSFET	4.5V ~ 18V	0.8V, 2.4V	1.5A, 1.5A	Non-Inverting	-	20ns, 20ns	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
	UC3706DW IC GATE DRVR LOW-SIDE 16SOIC Texas Instruments	111	$8.75			Tube	Active	Low-Side	Independent	2	N-Channel MOSFET	5V ~ 40V	0.8V, 2.2V	1.5A, 1.5A	Inverting, Non-Inverting	-	40ns, 30ns	0°C ~ 70°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
	IR2213PBF IC GATE DRVR HALF-BRIDGE 14DIP Infineon Technologies	17	$8.79			Tube	Active	Half-Bridge	Independent	2	IGBT, N-Channel MOSFET	12V ~ 20V	6V, 9.5V	2A, 2.5A	Non-Inverting	1200 V	25ns, 17ns	-55°C ~ 150°C (TJ)	Through Hole	14-DIP (0.300", 7.62mm)	14-DIP