Diodes - Rectifiers - Single

Category Introduction

Products within the single rectifier diode family are used to allow current flow in one direction only, and implement exactly one instance of this function per device package. Diodes used for other purposes (including zener and variable capacitance diodes) are listed separately in product families of their own, as are products incorporating multiple diodes per device package.

Product List

48585 Items
PDF Mfr Part # Quantity
Available
UnitPrice RFQ Series Packaging Product StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
APT100S20BG
APT100S20BG
DIODE SCHOTTKY 200V 120A TO247
Microchip Technology
57 $5.69
Tube ActiveSchottky200 V120A950 mV @ 100 AFast Recovery =< 500ns, > 200mA (Io)70 ns2 mA @ 200 V-Through HoleTO-247-2TO-247 [B]-55°C ~ 150°C
STTH6004W
STTH6004W
DIODE GEN PURP 400V 60A DO247
STMicroelectronics
157 $5.70
Tube ActiveStandard400 V60A1.2 V @ 60 AFast Recovery =< 500ns, > 200mA (Io)90 ns50 µA @ 400 V-Through HoleDO-247-2 (Straight Leads)DO-247175°C (Max)
1N5806US
1N5806US
DIODE GEN PURP 150V 1A D5A
Microchip Technology
86 $5.85
Bulk ActiveStandard150 V1A875 mV @ 1 AFast Recovery =< 500ns, > 200mA (Io)25 ns1 µA @ 150 V25pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
STTH6012W
STTH6012W
DIODE GEN PURP 1.2KV 60A DO247
STMicroelectronics
57 $6.31
Tube ActiveStandard1200 V60A2.25 V @ 60 AFast Recovery =< 500ns, > 200mA (Io)125 ns30 µA @ 1200 V-Through HoleDO-247-2 (Straight Leads)DO-247175°C (Max)
1N6642US
1N6642US
DIODE GEN PURP 75V 300MA D5D
Microchip Technology
45 $6.51
Bulk ActiveStandard75 V300mA1.2 V @ 100 mAFast Recovery =< 500ns, > 200mA (Io)5 ns500 nA @ 75 V5pF @ 0V, 1MHzSurface MountSQ-MELF, DD-5D-65°C ~ 175°C
DSP45-18A
DSP45-18A
POWER DIODE DISCRETES-RECTIFIER
IXYS
27 $7.01
Tube ActiveStandard1800 V45A1.26 V @ 45 AStandard Recovery >500ns, > 200mA (Io)-40 µA @ 1800 V18pF @ 400V, 1MHzThrough HoleTO-247-3TO-247 (IXTH)-40°C ~ 175°C
IDH12SG60CXKSA2
IDH12SG60CXKSA2
DIODE SCHOTTKY 600V 12A TO220-2
Infineon Technologies
110 $7.62
CoolSiC™+ Tube ActiveSilicon Carbide Schottky600 V12A (DC)2.1 V @ 12 ANo Recovery Time > 500mA (Io)0 ns100 µA @ 600 V310pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-1-55°C ~ 175°C
1N5809US
1N5809US
DIODE GEN PURP 100V 3A B-MELF
Microchip Technology
29 $8.12
Bulk ActiveStandard100 V3A875 mV @ 4 AFast Recovery =< 500ns, > 200mA (Io)30 ns5 µA @ 100 V60pF @ 10V, 1MHzSurface MountSQ-MELF, BB, SQ-MELF-65°C ~ 175°C
GB05MPS17-263
GB05MPS17-263
1700V 5A TO-263-7 SIC SCHOTTKY M
GeneSiC Semiconductor
89 $8.59
SiC Schottky MPS™ Tube ActiveSilicon Carbide Schottky1700 V18A (DC)-No Recovery Time > 500mA (Io)--470pF @ 1V, 1MHzSurface MountTO-263-8, D²Pak (7 Leads + Tab), TO-263CATO-263-7-55°C ~ 175°C
GD10MPS17H
GD10MPS17H
1700V 10A TO-247-2 SIC SCHOTTKY
GeneSiC Semiconductor
38 $8.52
SiC Schottky MPS™ Tube ActiveSilicon Carbide Schottky1700 V28A (DC)1.8 V @ 10 ANo Recovery Time > 500mA (Io)0 ns5 µA @ 1700 V721pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
SICRF101200
SICRF101200
DIODE SCHOTTKY SILICON CARBIDE S
SMC Diode Solutions
18 $8.76
Tube ActiveSilicon Carbide Schottky1200 V10A1.8 V @ 10 ANo Recovery Time > 500mA (Io)0 ns100 µA @ 1200 V640pF @ 0V, 1MHzThrough HoleTO-220-2 Full Pack, Isolated TabITO-220AC-55°C ~ 175°C
IDH20G65C6XKSA1
IDH20G65C6XKSA1
DIODE SCHOTTKY 650V 41A TO220-2
Infineon Technologies
100 $8.87
Tube ActiveSilicon Carbide Schottky650 V41A (DC)1.35 V @ 20 ANo Recovery Time > 500mA (Io)0 ns67 µA @ 420 V970pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-55°C ~ 175°C
MSC030SDA120B
MSC030SDA120B
DIODE SCHOTTKY 1.2KV 30A TO247
Microchip Technology
73 $9.27
Tube ActiveSilicon Carbide Schottky1200 V30A (DC)1.5 V @ 30 ANo Recovery Time > 500mA (Io)0 ns--Through HoleTO-247-2TO-247-
IDH20G65C5XKSA2
IDH20G65C5XKSA2
DIODE SCHOTKY 650V 20A TO220-2-1
Infineon Technologies
85 $9.45
CoolSiC™+ Tube ActiveSilicon Carbide Schottky650 V20A (DC)1.7 V @ 20 ANo Recovery Time > 500mA (Io)0 ns210 µA @ 650 V590pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-1-55°C ~ 175°C
63SPB100A
63SPB100A
DIODE SCHOTTKY 100V 60A SPD-2A
SMC Diode Solutions
31 $12.10
Bulk ActiveSchottky100 V60A870 mV @ 60 AFast Recovery =< 500ns, > 200mA (Io)-1 mA @ 100 V1500pF @ 5V, 1MHzSurface MountSPD-2ASPD-2A-55°C ~ 175°C
VS-85HFR60
VS-85HFR60
DIODE GEN PURP 600V 85A DO203AB
Vishay General Semiconductor - Diodes Division
43 $12.98
Bulk ActiveStandard, Reverse Polarity600 V85A1.2 V @ 267 AStandard Recovery >500ns, > 200mA (Io)-9 mA @ 600 V-Chassis, Stud MountDO-203AB, DO-5, StudDO-203AB (DO-5)-65°C ~ 180°C
IDW30G65C5XKSA1
IDW30G65C5XKSA1
DIODE SCHOTTKY 650V 30A TO247-3
Infineon Technologies
75 $13.15
CoolSiC™+ Tube ActiveSilicon Carbide Schottky650 V30A (DC)1.7 V @ 30 ANo Recovery Time > 500mA (Io)0 ns220 µA @ 650 V860pF @ 1V, 1MHzThrough HoleTO-247-3PG-TO247-3-55°C ~ 175°C
UJ3D1725K2
UJ3D1725K2
1700V 25A SIC SCHOTTKY DIODE G3,
UnitedSiC
50 $16.48
Automotive, AEC-Q101 Tube ActiveSilicon Carbide Schottky1700 V25A (DC)1.7 V @ 25 ANo Recovery Time > 500mA (Io)0 ns360 µA @ 1700 V1500pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
GD25MPS17H
GD25MPS17H
1700V 25A TO-247-2 SIC SCHOTTKY
GeneSiC Semiconductor
31 $18.63
SiC Schottky MPS™ Tube ActiveSilicon Carbide Schottky1700 V56A (DC)1.8 V @ 25 ANo Recovery Time > 500mA (Io)0 ns20 µA @ 1700 V1.083nF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
UJ3D1250K2
UJ3D1250K2
1200V 50A SIC SCHOTTKY DIODE G3,
UnitedSiC
14 $23.56
Tube ActiveSilicon Carbide Schottky1200 V50A (DC)1.7 V @ 50 ANo Recovery Time > 500mA (Io)0 ns400 µA @ 1200 V2.34nF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C