CSD87333Q3DT
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Texas Instruments CSD87333Q3DT

Manufacturer No:
CSD87333Q3DT
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Datasheet:
CSD87333Q3DT Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 30V 15A 8VSON
Delivery:
Payment:
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Product Attributes

FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:15A
Rds On (Max) @ Id, Vgs:14.3mOhm @ 4A, 8V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:662pF @ 15V
Power - Max:6W
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:8-VSON (3.3x3.3)
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Similar Products

Part Number CSD87333Q3DT CSD87334Q3DT   CSD87335Q3DT   CSD87333Q3D  
Manufacturer Texas Instruments Texas Instruments Texas Instruments Texas Instruments
Product Status Active Active Active Active
FET Type 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate, 5V Drive Standard Standard Logic Level Gate, 5V Drive
Drain to Source Voltage (Vdss) 30V 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 15A - 25A 15A
Rds On (Max) @ Id, Vgs 14.3mOhm @ 4A, 8V 6mOhm @ 12A, 8V - 14.3mOhm @ 4A, 8V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 1.9V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 4.5V 8.3nC @ 4.5V 7.4nC @ 4.5V 4.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 662pF @ 15V 1260pF @ 15V 1050pF @ 15V 662pF @ 15V
Power - Max 6W 6W 6W 6W
Operating Temperature 125°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 125°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerLDFN 8-PowerTDFN
Supplier Device Package 8-VSON (3.3x3.3) 8-VSON (3.3x3.3) 8-LSON (3.3x3.3) 8-VSON (3.3x3.3)

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