Texas Instruments-CSD86311W1723 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	4.5A
Rds On (Max) @ Id, Vgs:	39mOhm @ 2A, 8V
Vgs(th) (Max) @ Id:	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	585pF @ 12.5V
Power - Max:	1.5W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	12-UFBGA, DSBGA
Supplier Device Package:	12-DSBGA

Texas Instruments CSD86311W1723