Texas Instruments-CSD17303Q5 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	32A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	3V, 8V
Rds On (Max) @ Id, Vgs:	2.4mOhm @ 25A, 8V
Vgs(th) (Max) @ Id:	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	23 nC @ 4.5 V
Vgs (Max):	+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:	3420 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	3.2W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-VSON-CLIP (5x6)
Package / Case:	8-PowerTDFN

Texas Instruments CSD17303Q5