Texas Instruments-CSD16411Q3 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	14A (Ta), 56A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	3.8 nC @ 4.5 V
Vgs (Max):	+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds:	570 pF @ 12.5 V
FET Feature:	-
Power Dissipation (Max):	2.7W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-VSONP (3x3.15)
Package / Case:	8-PowerVDFN

Texas Instruments CSD16411Q3