Texas Instruments-CSD16342Q5A - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 8V
Rds On (Max) @ Id, Vgs:	4.7mOhm @ 20A, 8V
Vgs(th) (Max) @ Id:	1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	7.1 nC @ 4.5 V
Vgs (Max):	+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:	1350 pF @ 12.5 V
FET Feature:	-
Power Dissipation (Max):	3W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-VSONP (5x6)
Package / Case:	8-PowerTDFN

Texas Instruments CSD16342Q5A