Texas Instruments-CSD16301Q2 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	3V, 8V
Rds On (Max) @ Id, Vgs:	24mOhm @ 4A, 8V
Vgs(th) (Max) @ Id:	1.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	2.8 nC @ 4.5 V
Vgs (Max):	+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:	340 pF @ 12.5 V
FET Feature:	-
Power Dissipation (Max):	2.3W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-SON
Package / Case:	6-SMD, Flat Leads

Texas Instruments CSD16301Q2