STMicroelectronics-STX112-AP - Transistors - Bipolar (BJT) - Single Product Specifications and Latest Quotes

Part Number	STX112-AP	STX117-AP
Manufacturer	STMicroelectronics	STMicroelectronics
Product Status	Obsolete	Obsolete
Transistor Type	NPN - Darlington	PNP
Current - Collector (Ic) (Max)	2 A	2 A
Voltage - Collector Emitter Breakdown (Max)	100 V	100 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 8mA, 2A	2.5V @ 8mA, 2A
Current - Collector Cutoff (Max)	2mA	2mA
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 1A, 4V	1000 @ 1A, 4V
Power - Max	1.2 W	1.2 W
Frequency - Transition	-	-
Operating Temperature	150°C (TJ)	150°C (TJ)
Mounting Type	Through Hole	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92AP	TO-92AP

Transistor Type:	NPN - Darlington
Current - Collector (Ic) (Max):	2 A
Voltage - Collector Emitter Breakdown (Max):	100 V
Vce Saturation (Max) @ Ib, Ic:	2.5V @ 8mA, 2A
Current - Collector Cutoff (Max):	2mA
DC Current Gain (hFE) (Min) @ Ic, Vce:	1000 @ 1A, 4V
Power - Max:	1.2 W
Frequency - Transition:	-
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:	TO-92AP

STMicroelectronics STX112-AP