STWA65N65DM2AG
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STMicroelectronics STWA65N65DM2AG

Manufacturer No:
STWA65N65DM2AG
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STWA65N65DM2AG Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 60A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:50mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:5500 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):446W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247 Long Leads
Package / Case:TO-247-3
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Similar Products

Part Number STWA65N65DM2AG STW65N65DM2AG  
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 50mOhm @ 30A, 10V 50mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 120 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 100 V 5500 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 446W (Tc) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247 Long Leads TO-247-3
Package / Case TO-247-3 TO-247-3

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