STW56N60M2-4
  • Share:

STMicroelectronics STW56N60M2-4

Manufacturer No:
STW56N60M2-4
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STW56N60M2-4 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 52A TO247-4L
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:52A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:55mOhm @ 26A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:91 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:3750 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):350W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-4
Package / Case:TO-247-4
0 Remaining View Similar

In Stock

$9.52
102

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW56N60M2-4 STW56N65M2-4  
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 52A (Tc) 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 26A, 10V 62mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 91 nC @ 10 V 93 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 3750 pF @ 100 V 3900 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 350W (Tc) 358W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-4 TO-247-4
Package / Case TO-247-4 TO-247-4

Related Product By Categories

SIHD5N80AE-GE3
SIHD5N80AE-GE3
Vishay Siliconix
E SERIES POWER MOSFET DPAK (TO-2
BSC030N03LSGATMA1
BSC030N03LSGATMA1
Infineon Technologies
MOSFET N-CH 30V 23A/100A TDSON
SISS71DN-T1-GE3
SISS71DN-T1-GE3
Vishay Siliconix
MOSFET P-CH 100V 23A PPAK1212-8S
SI2343DS-T1-BE3
SI2343DS-T1-BE3
Vishay Siliconix
P-CHANNEL 30-V (D-S) MOSFET
IPS60R650CEAKMA1
IPS60R650CEAKMA1
Infineon Technologies
CONSUMER
SI6433BDQ-T1-E3
SI6433BDQ-T1-E3
Vishay Siliconix
MOSFET P-CH 12V 4A 8TSSOP
IRL3714ZSTRRPBF
IRL3714ZSTRRPBF
Infineon Technologies
MOSFET N-CH 20V 36A D2PAK
NVMFS5830NLT3G
NVMFS5830NLT3G
onsemi
MOSFET N-CH 40V 29A 5DFN
NVMFS5833NWFT3G
NVMFS5833NWFT3G
onsemi
MOSFET N-CH 40V 16A 5DFN
APT40M75JN
APT40M75JN
Microsemi Corporation
MOSFET N-CH 400V 56A ISOTOP
DMN60H4D5SK3-13
DMN60H4D5SK3-13
Diodes Incorporated
MOSFET N-CH 600V 2.5A TO252
AO3403L_102
AO3403L_102
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 2.6A SOT23-3

Related Product By Brand

BYT30PI-1000RG
BYT30PI-1000RG
STMicroelectronics
DIODE GEN PURP 1KV 30A DOP3I
TYN1012RG
TYN1012RG
STMicroelectronics
SCR 1KV 12A TO220AB
STF22NM60N
STF22NM60N
STMicroelectronics
MOSFET N-CH 600V 16A TO220FP
EMIF06-SD03F3
EMIF06-SD03F3
STMicroelectronics
FILTER RC(PI) 50 OHM/15PF SMD
SPC56EL60L5CBFSY
SPC56EL60L5CBFSY
STMicroelectronics
IC MCU 32BIT 1MB FLASH 144LQFP
ST7FLITE39F2B6
ST7FLITE39F2B6
STMicroelectronics
IC MCU 8BIT 8KB FLASH 20DIP
74LCX07YTTR
74LCX07YTTR
STMicroelectronics
IC BUF NON-INVERT 3.6V 14TSSOP
M24C02-RDW6T
M24C02-RDW6T
STMicroelectronics
IC EEPROM 2KBIT I2C 8TSSOP
LM4041AECT-1.2
LM4041AECT-1.2
STMicroelectronics
IC VREF SHUNT 0.1% SOT323-5
L78L33ACZ-AP
L78L33ACZ-AP
STMicroelectronics
IC REG LINEAR 3.3V 100MA TO92-3
LD3985M30R
LD3985M30R
STMicroelectronics
IC REG LINEAR 3V 150MA SOT23-5
TESEO-VIC3D
TESEO-VIC3D
STMicroelectronics
INDUSTRIAL GNSS DEAD RECKONING M