STW38NB20
  • Share:

STMicroelectronics STW38NB20

Manufacturer No:
STW38NB20
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STW38NB20 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 38A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 19A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:3800 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):180W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

-
585

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW38NB20 STW34NB20  
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 19A, 10V 75mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 25 V 3300 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 180W (Tc) 180W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

PJA3432_R1_00001
PJA3432_R1_00001
Panjit International Inc.
SOT-23, MOSFET
IRF5803TRPBF
IRF5803TRPBF
Infineon Technologies
MOSFET P-CH 40V 3.4A MICRO6
BVSS123LT1G
BVSS123LT1G
onsemi
MOSFET N-CH 100V 170MA SOT23-3
PJD70P03_L2_00001
PJD70P03_L2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
DMN3060LCA3-7
DMN3060LCA3-7
Diodes Incorporated
MOSFET N-CH 30V 3.9A X4DSN1006-3
TK9A55DA(STA4,Q,M)
TK9A55DA(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 550V 8.5A TO220SIS
APT5017SVRG
APT5017SVRG
Microchip Technology
MOSFET N-CH 500V 30A D3PAK
APT5010JLL
APT5010JLL
Microchip Technology
MOSFET N-CH 500V 41A ISOTOP
AON7700
AON7700
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 16A/40A 8DFN
IRF3704ZCSTRLP
IRF3704ZCSTRLP
Infineon Technologies
MOSFET N-CH 20V 67A D2PAK
FQPF6N90C
FQPF6N90C
onsemi
MOSFET N-CH 900V 6A TO220F
R8003KND3TL1
R8003KND3TL1
Rohm Semiconductor
HIGH-SPEED SWITCHING NCH 800V 3A

Related Product By Brand

LCDP1511DRL
LCDP1511DRL
STMicroelectronics
THYRISTOR 15A 8SOIC
EV-VND5E025AK
EV-VND5E025AK
STMicroelectronics
BOARD EVAL FOR VND5E025AK
BULB49DT4
BULB49DT4
STMicroelectronics
TRANS NPN 450V 5A D2PAK
STD80N3LL
STD80N3LL
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
STI200N6F3
STI200N6F3
STMicroelectronics
MOSFET N-CH 60V 120A I2PAK
STM8AL3166TCY
STM8AL3166TCY
STMicroelectronics
IC MCU 8BIT 32KB FLASH 32LQFP
STM32L476JGY6VTR
STM32L476JGY6VTR
STMicroelectronics
IC MCU 32BIT 1MB FLASH 72WLCSP
TSX923IST
TSX923IST
STMicroelectronics
IC CMOS 2 CIRCUIT 10MINISO
TSM103WAID
TSM103WAID
STMicroelectronics
IC AMPLIFIER 8SO
74V1G08STR
74V1G08STR
STMicroelectronics
IC GATE AND 1CH 2-INP SOT23-5
MASTERGAN4
MASTERGAN4
STMicroelectronics
HIGH POWER DENSITY 600V HALF BRI
L6599AN
L6599AN
STMicroelectronics
IC RESONANT CONVERTR CTRLR 16DIP