STW31N65M5
  • Share:

STMicroelectronics STW31N65M5

Manufacturer No:
STW31N65M5
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STW31N65M5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 22A TO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:148mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:816 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$5.33
97

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW31N65M5 STW32N65M5   STW34N65M5   STW38N65M5   STW35N65M5   STW21N65M5   STW30N65M5  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Obsolete Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 650 V 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 24A (Tc) 28A (Tc) 30A (Tc) 27A (Tc) 17A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 148mOhm @ 11A, 10V 119mOhm @ 12A, 10V 110mOhm @ 14A, 10V 95mOhm @ 15A, 10V 98mOhm @ 13.5A, 10V 190mOhm @ 8.5A, 10V 139mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 72 nC @ 10 V 62.5 nC @ 10 V 71 nC @ 10 V 83 nC @ 10 V 50 nC @ 10 V 64 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 816 pF @ 100 V 3320 pF @ 100 V 2700 pF @ 100 V 3000 pF @ 100 V 3750 pF @ 100 V 1950 pF @ 100 V 2880 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 150W (Tc) 150W (Tc) 190W (Tc) 190W (Tc) 160W (Tc) 125W (Tc) 140W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

Related Product By Categories

IPB60R299CPAATMA1
IPB60R299CPAATMA1
Infineon Technologies
MOSFET N-CH 600V 11A TO263-3
IRFS3006TRL7PP
IRFS3006TRL7PP
Infineon Technologies
MOSFET N-CH 60V 240A D2PAK
TPH5R906NH,L1Q
TPH5R906NH,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 28A 8SOP
IPA60R460CEXKSA1
IPA60R460CEXKSA1
Infineon Technologies
MOSFET N-CH 600V 9.1A TO220-FP
SI2367DS-T1-BE3
SI2367DS-T1-BE3
Vishay Siliconix
P-CHANNEL 20-V (D-S) MOSFET
SI4155DY-T1-GE3
SI4155DY-T1-GE3
Vishay Siliconix
P-CHANNEL 30-V (D-S) MOSFET SO-8
DMT10H015LCG-7
DMT10H015LCG-7
Diodes Incorporated
MOSFET N-CH 100V 9.4A/34A 8DFN
BSC106N025S G
BSC106N025S G
Infineon Technologies
MOSFET N-CH 25V 13A/30A TDSON
SPP06N60C3HKSA1
SPP06N60C3HKSA1
Infineon Technologies
MOSFET N-CH 650V 6.2A TO220-3
ZXMN2F34MATA
ZXMN2F34MATA
Diodes Incorporated
MOSFET N-CH 20V 4A DFN322
RJK1003DPN-E0#T2
RJK1003DPN-E0#T2
Renesas Electronics America Inc
MOSFET N-CH 100V 50A TO220AB
IPP030N10N3GHKSA1
IPP030N10N3GHKSA1
Infineon Technologies
MOSFET N-CH 100V 100A TO220-3

Related Product By Brand

STEVAL-ILL045V1
STEVAL-ILL045V1
STMicroelectronics
BOARD DEMO NON-ISOL HVLED815PF
STEVAL-ISA102V1
STEVAL-ISA102V1
STMicroelectronics
BOARD EVAL 80W PFC L6562A
L6210
L6210
STMicroelectronics
BRIDGE RECT 1P 50V 2A 16DIP
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
STL19N65M5
STL19N65M5
STMicroelectronics
MOSFET N-CH 650V 12.5A POWERFLAT
STW52NK25Z
STW52NK25Z
STMicroelectronics
MOSFET N-CH 250V 52A TO247-3
STGWA30HP65FB2
STGWA30HP65FB2
STMicroelectronics
TRENCH GATE FIELD-STOP 650 V, 30
STM32L031K6T6
STM32L031K6T6
STMicroelectronics
IC MCU 32BIT 32KB FLASH 32LQFP
STM32F401RCT6
STM32F401RCT6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 64LQFP
STGIPQ5C60T-HZ
STGIPQ5C60T-HZ
STMicroelectronics
SLLIMM NANO 2ND SERIES IPM, 3-PH
STM795TM6E
STM795TM6E
STMicroelectronics
IC SUPERVISOR 1 CHANNEL 8SO
L4931CDT80-TR
L4931CDT80-TR
STMicroelectronics
IC REG LINEAR 8V 250MA DPAK