STW28NM60ND
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STMicroelectronics STW28NM60ND

Manufacturer No:
STW28NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STW28NM60ND Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 23A TO247
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:23A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:150mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:62.5 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2090 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW28NM60ND STW18NM60ND   STW21NM60ND   STW23NM60ND   STW25NM60ND   STW26NM60ND   STW27NM60ND  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 23A (Tc) 13A (Tc) 17A (Tc) 19.5A (Tc) 21A (Tc) 21A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 11.5A, 10V 290mOhm @ 6.5A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 175mOhm @ 10.5A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 62.5 nC @ 10 V 34 nC @ 10 V 60 nC @ 10 V 70 nC @ 10 V 80 nC @ 10 V 54.6 nC @ 10 V -
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2090 pF @ 100 V 1030 pF @ 50 V 1800 pF @ 50 V 2050 pF @ 50 V 2400 pF @ 50 V 1817 pF @ 100 V -
FET Feature - - - - - - -
Power Dissipation (Max) 190W (Tc) 110W (Tc) 140W (Tc) 150W (Tc) 160W (Tc) 190W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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