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| Part Number | STW26N65DM2 | STW56N65DM2 |
|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) | 48A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V | 65mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35.5 nC @ 10 V | 88 nC @ 10 V |
| Vgs (Max) | ±25V | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 100 V | 4100 pF @ 100 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 170W (Tc) | 360W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-247-3 | TO-247-3 |
| Package / Case | TO-247-3 | TO-247-3 |
