STW25NM60ND
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STMicroelectronics STW25NM60ND

Manufacturer No:
STW25NM60ND
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STW25NM60ND Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 21A TO247-3
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Part Number STW25NM60ND STW28NM60ND   STW55NM60ND   STW27NM60ND   STW26NM60ND   STW15NM60ND   STW21NM60ND   STW23NM60ND   STW25NM60N  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 23A (Tc) 51A (Tc) 21A (Tc) 21A (Tc) 14A (Tc) 17A (Tc) 19.5A (Tc) 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 10.5A, 10V 150mOhm @ 11.5A, 10V 60mOhm @ 25.5A, 10V 160mOhm @ 10.5A, 10V 175mOhm @ 10.5A, 10V 299mOhm @ 7A, 10V 220mOhm @ 8.5A, 10V 180mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 62.5 nC @ 10 V 190 nC @ 10 V - 54.6 nC @ 10 V 40 nC @ 10 V 60 nC @ 10 V 70 nC @ 10 V 84 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 50 V 2090 pF @ 100 V 5800 pF @ 50 V - 1817 pF @ 100 V 1250 pF @ 50 V 1800 pF @ 50 V 2050 pF @ 50 V 2400 pF @ 50 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 160W (Tc) 190W (Tc) 350W (Tc) 160W (Tc) 190W (Tc) 125W (Tc) 140W (Tc) 150W (Tc) 160W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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