STW25N60M2-EP
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STMicroelectronics STW25N60M2-EP

Manufacturer No:
STW25N60M2-EP
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STW25N60M2-EP Datasheet
ECAD Model:
-
Description:
MOSFET N-CHANNEL 600V 18A TO247
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:188mOhm @ 9A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1090 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW25N60M2-EP STW27N60M2-EP  
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc) 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 188mOhm @ 9A, 10V 163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 33 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1090 pF @ 100 V 1320 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

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