STW24NM65N
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STMicroelectronics STW24NM65N

Manufacturer No:
STW24NM65N
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STW24NM65N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 19A TO247-3
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):160W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number STW24NM65N STW14NM65N   STW20NM65N   STW24NM60N  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 12A (Tc) 19A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9.5A, 10V 380mOhm @ 6A, 10V 190mOhm @ 9.5A, 10V 190mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 45 nC @ 10 V 70 nC @ 10 V 46 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 50 V 1300 pF @ 50 V 2500 pF @ 50 V 1400 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 160W (Tc) 125W (Tc) 160W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3

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