STW23NM60N
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STMicroelectronics STW23NM60N

Manufacturer No:
STW23NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STW23NM60N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 19A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2050 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Part Number STW23NM60N STW24NM60N   STW26NM60N   STW25NM60N   STW23NM60ND   STW43NM60N   STW13NM60N   STW21NM60N   STW22NM60N   STW23NM50N  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 17A (Tc) 20A (Tc) 21A (Tc) 19.5A (Tc) 35A (Tc) 11A (Tc) 17A (Tc) 16A (Tc) 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 9.5A, 10V 190mOhm @ 8A, 10V 165mOhm @ 10A, 10V 160mOhm @ 10.5A, 10V 180mOhm @ 10A, 10V 88mOhm @ 17.5A, 10V 360mOhm @ 5.5A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 190mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 46 nC @ 10 V 60 nC @ 10 V 84 nC @ 10 V 70 nC @ 10 V 130 nC @ 10 V 30 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±25V ±30V ±30V ±25V ±25V ±30V ±25V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 2050 pF @ 50 V 1400 pF @ 50 V 1800 pF @ 50 V 2400 pF @ 50 V 2050 pF @ 50 V 4200 pF @ 50 V 790 pF @ 50 V 1900 pF @ 50 V 1330 pF @ 50 V 1330 pF @ 50 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 150W (Tc) 125W (Tc) 140W (Tc) 160W (Tc) 150W (Tc) 255W (Tc) 90W (Tc) 140W (Tc) 125W (Tc) 125W (Tc)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3

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