STW18NM80
  • Share:

STMicroelectronics STW18NM80

Manufacturer No:
STW18NM80
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STW18NM80 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 17A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:295mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2070 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$7.98
123

Please send RFQ , we will respond immediately.

Similar Products

Part Number STW18NM80 STW11NM80  
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 295mOhm @ 8.5A, 10V 400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 43.6 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 50 V 1630 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 190W (Tc) 150W (Tc)
Operating Temperature 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247-3
Package / Case TO-247-3 TO-247-3

Related Product By Categories

FDBL86561-F085
FDBL86561-F085
onsemi
MOSFET N-CH 60V 300A 8HPSOF
IRFP7530PBF
IRFP7530PBF
Infineon Technologies
MOSFET N-CH 60V 195A TO247
IRFBC20SPBF
IRFBC20SPBF
Vishay Siliconix
MOSFET N-CH 600V 2.2A D2PAK
SCTW40N120G2VAG
SCTW40N120G2VAG
STMicroelectronics
SICFET N-CH 1200V 33A HIP247
IPL65R210CFDAUMA1
IPL65R210CFDAUMA1
Infineon Technologies
MOSFET N-CH 650V 16.6A 4VSON
IXFA130N10T
IXFA130N10T
IXYS
MOSFET N-CH 100V 130A TO263
NTD5C434NT4G
NTD5C434NT4G
onsemi
MOSFET N-CH 40V 33A/160A DPAK
APT10026L2LLG
APT10026L2LLG
Microchip Technology
MOSFET N-CH 1000V 38A 264 MAX
IRFZ44VSTRL
IRFZ44VSTRL
Infineon Technologies
MOSFET N-CH 60V 55A D2PAK
IRF3007SPBF
IRF3007SPBF
Infineon Technologies
MOSFET N-CH 75V 62A D2PAK
ZVP0120ASTOB
ZVP0120ASTOB
Diodes Incorporated
MOSFET P-CH 200V 110MA E-LINE
FDC5612_F095
FDC5612_F095
onsemi
MOSFET N-CH 60V 4.3A SUPERSOT6

Related Product By Brand

THBT20011D
THBT20011D
STMicroelectronics
THYRISTOR 200V 30A 8SOIC
STB6NK90ZT4
STB6NK90ZT4
STMicroelectronics
MOSFET N-CH 900V 5.8A D2PAK
STB10N95K5
STB10N95K5
STMicroelectronics
MOSFET N-CH 950V 8A D2PAK
STM32F091CBT7
STM32F091CBT7
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
STM32F071CBT7TR
STM32F071CBT7TR
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
ST62T62CM6
ST62T62CM6
STMicroelectronics
IC MCU 8BIT 1.8KB OTP 16SOIC
TSV630ICT
TSV630ICT
STMicroelectronics
IC OPAMP GP 1 CIRCUIT SC70-6
M95320-WMN6TP/P
M95320-WMN6TP/P
STMicroelectronics
IC EEPROM 32K SPI 20MHZ 8SO
STNS01PUR
STNS01PUR
STMicroelectronics
IC BATT CHG LI-ION 1CELL 12DFN
L6472H
L6472H
STMicroelectronics
IC MTR DRV BIPLR 3.3/5V 28HTSSOP
L78L06ACD
L78L06ACD
STMicroelectronics
IC REG LINEAR 6V 100MA 8SO
ST25DV16KC-IE8T3
ST25DV16KC-IE8T3
STMicroelectronics
DYNAMIC NFC/RFID TAG IC WITH 16-