STV160NF02LAT4
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STMicroelectronics STV160NF02LAT4

Manufacturer No:
STV160NF02LAT4
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Datasheet:
STV160NF02LAT4 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 160A 10POWERSO
Delivery:
Payment:
iso14001
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:160A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:175 nC @ 10 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:5500 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):210W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:10-PowerSO
Package / Case:PowerSO-10 Exposed Bottom Pad
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Similar Products

Part Number STV160NF02LAT4 STV160NF02LT4   STV160NF03LAT4  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 160A (Tc) 160A (Tc) 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 80A, 10V 2.5mOhm @ 80A, 10V 3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 175 nC @ 10 V 160 nC @ 10 V 160 nC @ 10 V
Vgs (Max) ±15V ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 15 V 4800 pF @ 15 V 5350 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 210W (Tc) 210W (Tc) 210W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ) 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 10-PowerSO 10-PowerSO 10-PowerSO
Package / Case PowerSO-10 Exposed Bottom Pad PowerSO-10 Exposed Bottom Pad PowerSO-10 Exposed Bottom Pad

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