STTH806G
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STMicroelectronics STTH806G

Manufacturer No:
STTH806G
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STTH806G Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 8A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:1.85 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):55 ns
Current - Reverse Leakage @ Vr:8 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:D2PAK
Operating Temperature - Junction:175°C (Max)
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Similar Products

Part Number STTH806G STTH8L06G   STTH8R06G   STTH802G   STTH806D  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete Obsolete Obsolete Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V 600 V 200 V 600 V
Current - Average Rectified (Io) 8A 8A 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 1.85 V @ 8 A 1.3 V @ 8 A 2.9 V @ 8 A 1.05 V @ 8 A 1.85 V @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 55 ns 105 ns 45 ns 30 ns 55 ns
Current - Reverse Leakage @ Vr 8 µA @ 600 V 8 µA @ 600 V 30 µA @ 600 V 6 µA @ 200 V 8 µA @ 600 V
Capacitance @ Vr, F - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Through Hole
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-220-2
Supplier Device Package D2PAK D2PAK D2PAK D2PAK TO-220AC
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

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