STTH3012W
  • Share:

STMicroelectronics STTH3012W

Manufacturer No:
STTH3012W
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STTH3012W Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 30A DO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:2.25 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):115 ns
Current - Reverse Leakage @ Vr:20 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-247-2 (Straight Leads)
Supplier Device Package:DO-247
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$4.18
13

Please send RFQ , we will respond immediately.

Similar Products

Part Number STTH3012W STTH30S12W   STTH3002W   STTH3010W   STTH3012D  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 200 V 1000 V 1200 V
Current - Average Rectified (Io) 30A 30A 30A 30A 30A
Voltage - Forward (Vf) (Max) @ If 2.25 V @ 30 A 2.9 V @ 30 A 1.05 V @ 30 A 2 V @ 30 A 2.25 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 115 ns 50 ns 50 ns 100 ns 115 ns
Current - Reverse Leakage @ Vr 20 µA @ 1200 V 15 µA @ 1200 V 20 µA @ 200 V 15 µA @ 1000 V 20 µA @ 1200 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) TO-220-2
Supplier Device Package DO-247 DO-247 DO-247 DO-247 TO-220AC
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

RS1BL
RS1BL
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 800MA SUBSMA
SS1H10-E3/61T
SS1H10-E3/61T
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 1A DO214AC
1N6484-E3/96
1N6484-E3/96
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 1A DO213AB
RS2A-13-F
RS2A-13-F
Diodes Incorporated
DIODE GEN PURP 50V 1.5A SMB
S3KHE3_A/I
S3KHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 3A DO214AB
VS-20TQ040SHM3
VS-20TQ040SHM3
Vishay General Semiconductor - Diodes Division
SCHOTTKY - D2PAK
SBL1040
SBL1040
Diodes Incorporated
DIODE SCHOTTKY 40V 10A TO220AC
VS-10ETF10PBF
VS-10ETF10PBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 10A TO220AC
VS-30ETH06FP-F3
VS-30ETH06FP-F3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 30A TO220FP
SS320 R7G
SS320 R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
NUR460/L01,112
NUR460/L01,112
NXP USA Inc.
DIODE GEN PURP 600V 4A DO201AD
1SS244T-72
1SS244T-72
Rohm Semiconductor
DIODE GEN PURP 220V 200MA MSD

Related Product By Brand

CLT01-38S4-TR
CLT01-38S4-TR
STMicroelectronics
PROTECTION DGTL ARRAY 38HTSSOP
TN4050HP-12G2YTR
TN4050HP-12G2YTR
STMicroelectronics
1200 V, 40 A AUTOMOTIVE GRADE AE
ST2408HI
ST2408HI
STMicroelectronics
TRANS NPN 600V 12A ISOWATT-218
STH22N95K5-2AG
STH22N95K5-2AG
STMicroelectronics
MOSFET
STM32L082KBU6
STM32L082KBU6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 32QFPN
STR736FV2T6
STR736FV2T6
STMicroelectronics
IC MCU 32BIT 256KB FLASH 100LQFP
ST72F325K4T6
ST72F325K4T6
STMicroelectronics
IC MCU 8BIT 16KB FLASH 32LQFP
LM124N
LM124N
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 14DIP
VIPER50A
VIPER50A
STMicroelectronics
IC OFFLIN CONV FLBACK 5PENTAWATT
VND600SP-E
VND600SP-E
STMicroelectronics
IC PWR DRIVER N-CHAN 1:1 PWRSO10
STM704SM6E
STM704SM6E
STMicroelectronics
IC SUPERVISOR 1 CHANNEL 8SO
ST2L05-3318K5
ST2L05-3318K5
STMicroelectronics
IC REG LIN 1.8V/3.3V 1A/1A 5SPAK