STTH3012W
  • Share:

STMicroelectronics STTH3012W

Manufacturer No:
STTH3012W
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STTH3012W Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 1.2KV 30A DO247
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:2.25 V @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):115 ns
Current - Reverse Leakage @ Vr:20 µA @ 1200 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:DO-247-2 (Straight Leads)
Supplier Device Package:DO-247
Operating Temperature - Junction:175°C (Max)
0 Remaining View Similar

In Stock

$4.18
13

Please send RFQ , we will respond immediately.

Similar Products

Part Number STTH3012W STTH30S12W   STTH3002W   STTH3010W   STTH3012D  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Active
Diode Type Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 200 V 1000 V 1200 V
Current - Average Rectified (Io) 30A 30A 30A 30A 30A
Voltage - Forward (Vf) (Max) @ If 2.25 V @ 30 A 2.9 V @ 30 A 1.05 V @ 30 A 2 V @ 30 A 2.25 V @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 115 ns 50 ns 50 ns 100 ns 115 ns
Current - Reverse Leakage @ Vr 20 µA @ 1200 V 15 µA @ 1200 V 20 µA @ 200 V 15 µA @ 1000 V 20 µA @ 1200 V
Capacitance @ Vr, F - - - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) DO-247-2 (Straight Leads) TO-220-2
Supplier Device Package DO-247 DO-247 DO-247 DO-247 TO-220AC
Operating Temperature - Junction 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max) 175°C (Max)

Related Product By Categories

IV1D12020T2
IV1D12020T2
Inventchip
SIC DIODE, 1200V 20A, TO-247-2
SSA23L-E3/5AT
SSA23L-E3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 2A DO214AC
V40DL45BP-M3/I
V40DL45BP-M3/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 45V 40A TO263AC
RGP02-15E-E3/54
RGP02-15E-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.5KV 500MA DO204
BAV20WS-G3-08
BAV20WS-G3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 250MA SOD323
S1BHE3_A/I
S1BHE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO214AC
DSR8V600
DSR8V600
Diodes Incorporated
DIODE GEN PURP 600V 8A TO220AC
MSS1P6HM3/89A
MSS1P6HM3/89A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 1A 60V MICROSMP
SURA8120T3G
SURA8120T3G
onsemi
DIODE GEN PURP 200V 2A SMA
1N4003GHR1G
1N4003GHR1G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO204AL
TSPB20U80S S2G
TSPB20U80S S2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 80V 20A SMPC4.0
RL256M-TP
RL256M-TP
Micro Commercial Co
DIODE GPP 2.5A DO-15

Related Product By Brand

STEVAL-ILL018V1
STEVAL-ILL018V1
STMicroelectronics
BOARD EVAL OSRAM WHITE LUW W5AM
STBV32G
STBV32G
STMicroelectronics
TRANS NPN 400V 1.5A TO92-3
STFU13N65M2
STFU13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STH3N150-2
STH3N150-2
STMicroelectronics
MOSFET N-CH 1500V 2.5A H2PAK
STB60NH02LT4
STB60NH02LT4
STMicroelectronics
MOSFET N-CH 24V 60A D2PAK
STM8AF6289TCY
STM8AF6289TCY
STMicroelectronics
IC MCU 8BIT 64KB FLASH 64LQFP
STM32L152RBH6
STM32L152RBH6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 64BGA
LMX358IST
LMX358IST
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8MINISO
TS952IYDT
TS952IYDT
STMicroelectronics
IC OPAMP GP 2 CIRCUIT 8SOIC
M93C56-WMN6T
M93C56-WMN6T
STMicroelectronics
IC EEPROM 2KBIT SPI 2MHZ 8SO
L7905C-D2TR
L7905C-D2TR
STMicroelectronics
IC REG LINEAR -5V 1.5A D2PAK
LM335AD
LM335AD
STMicroelectronics
SENSOR ANALOG -40C-100C 8SOIC