STTA306B-TR
  • Share:

STMicroelectronics STTA306B-TR

Manufacturer No:
STTA306B-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Datasheet:
STTA306B-TR Datasheet
ECAD Model:
-
Description:
DIODE GEN PURP 600V 3A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):3A
Voltage - Forward (Vf) (Max) @ If:1.85 V @ 3 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:20 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:125°C (Max)
0 Remaining View Similar

In Stock

-
309

Please send RFQ , we will respond immediately.

Similar Products

Part Number STTA306B-TR STTA506B-TR  
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 600 V 600 V
Current - Average Rectified (Io) 3A 5A
Voltage - Forward (Vf) (Max) @ If 1.85 V @ 3 A 1.75 V @ 5 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 20 µA @ 600 V 100 µA @ 600 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK
Operating Temperature - Junction 125°C (Max) 150°C (Max)

Related Product By Categories

MB3H60AH-AU_R1_000A1
MB3H60AH-AU_R1_000A1
Panjit International Inc.
SOD-123HE, SKY
ES3DB
ES3DB
MDD
DIODE GEN PURP 200V 3A SMB
BAT46
BAT46
STMicroelectronics
DIODE SCHOTTKY 100V 150MA DO35
SS1H9-E3/5AT
SS1H9-E3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 90V 1A DO214AC
6A6-T
6A6-T
Rectron USA
DIODE GEN PURP 600V 6A R-6
RB521S30YL
RB521S30YL
Nexperia USA Inc.
RB521S30/SOD523/SC-79
VS-20ETS08FP-M3
VS-20ETS08FP-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 20A TO220FP
SBL830
SBL830
Diodes Incorporated
DIODE SCHOTTKY 30V 8A TO220AC
EGP10FHE3/73
EGP10FHE3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 300V 1A DO204AL
RSFGLHMQG
RSFGLHMQG
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 500MA SUBSMA
BYV29-600PQ
BYV29-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 9A TO220AB
B160AF-13
B160AF-13
Diodes Incorporated
DIODE SCHOTTKY 60V 1A SMAF

Related Product By Brand

1.5KE440CARL
1.5KE440CARL
STMicroelectronics
TVS DIODE 376VWM 776VC DO201
TPA68
TPA68
STMicroelectronics
THYRISTOR 68V 150A DO204AC
LET9060STR
LET9060STR
STMicroelectronics
RF FET LDMOS 80V POWERSO-10RF
STL4N80K5
STL4N80K5
STMicroelectronics
MOSFET N-CH 800V 2.5A POWERFLAT
STW88N65M5
STW88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247-3
TS555IDT
TS555IDT
STMicroelectronics
IC OSC SINGLE TIMER 2.7MHZ 8SOIC
TSM104ID
TSM104ID
STMicroelectronics
IC OPAMP GP 4 CIRCUIT 16SO
74AC16245TTR
74AC16245TTR
STMicroelectronics
IC TXRX NON-INVERT 6V 48TSSOP
IPS1025HFTR
IPS1025HFTR
STMicroelectronics
HIGH EFFICIENCY, HIGH-SIDE SWITC
TS431ILT
TS431ILT
STMicroelectronics
IC VREF SHUNT ADJ 2% SOT23-5
PSD813F2VA-15M
PSD813F2VA-15M
STMicroelectronics
IC FLASH 1M PARALLEL 52PQFP
LRI64-A1T/1GE
LRI64-A1T/1GE
STMicroelectronics
RFID TAG R/W 13.56MHZ INLAY