STMicroelectronics-STT2PF60L - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	250mOhm @ 1A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	7 nC @ 10 V
Vgs (Max):	±15V
Input Capacitance (Ciss) (Max) @ Vds:	313 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	1.6W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-23-6
Package / Case:	SOT-23-6

STMicroelectronics STT2PF60L