STMicroelectronics-STS10P4LLF6 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	15mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:	1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:	34 nC @ 4.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	3525 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	2.7W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOIC
Package / Case:	8-SOIC (0.154", 3.90mm Width)

STMicroelectronics STS10P4LLF6