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| Part Number | STPSC806G-TR | STPSC606G-TR |
|---|---|---|
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Status | Active | Active |
| Diode Type | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 600 V |
| Current - Average Rectified (Io) | 8A | 6A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A | 1.7 V @ 6 A |
| Speed | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V | 75 µA @ 600 V |
| Capacitance @ Vr, F | 450pF @ 0V, 1MHz | 375pF @ 0V, 1MHz |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | D²PAK | D2PAK |
| Operating Temperature - Junction | -40°C ~ 175°C | -40°C ~ 175°C |
