STPSC5H12B-TR1
  • Share:

STMicroelectronics STPSC5H12B-TR1

Manufacturer No:
STPSC5H12B-TR1
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Datasheet:
STPSC5H12B-TR1 Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 1.2KV 5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):1200 V
Current - Average Rectified (Io):5A
Voltage - Forward (Vf) (Max) @ If:1.5 V @ 5 A
Speed:No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):0 ns
Current - Reverse Leakage @ Vr:30 µA @ 1200 V
Capacitance @ Vr, F:450pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
Operating Temperature - Junction:-40°C ~ 175°C
0 Remaining View Similar

In Stock

-
551

Please send RFQ , we will respond immediately.

Similar Products

Part Number STPSC5H12B-TR1 STPSC6H12B-TR1   STPSC2H12B-TR1  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V 1200 V
Current - Average Rectified (Io) 5A 6A 5A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 5 A 1.9 V @ 6 A 1.5 V @ 2 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns 0 ns
Current - Reverse Leakage @ Vr 30 µA @ 1200 V 400 µA @ 1200 V 12 µA @ 1200 V
Capacitance @ Vr, F 450pF @ 0V, 1MHz 330pF @ 0V, 1MHz 190pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK DPAK DPAK
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

Related Product By Categories

S1MALH
S1MALH
Taiwan Semiconductor Corporation
1A, 1000V, STANDARD RECOVERY REC
RS1D_R1_00001
RS1D_R1_00001
Panjit International Inc.
SMA, FAST
FR40KR05
FR40KR05
GeneSiC Semiconductor
DIODE GEN PURP REV 800V 40A DO5
SD101AWS-E3-18
SD101AWS-E3-18
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 150MW 60V SOD323
AU2PKHM3_A/H
AU2PKHM3_A/H
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 800V 1.3A TO277A
NSB8MT-E3/45
NSB8MT-E3/45
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1KV 8A TO263AB
SF5402-TR
SF5402-TR
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A SOD64
CDLL0.5A40/TR
CDLL0.5A40/TR
Microchip Technology
DIODE SMALL-SIGNAL SCHOTTKY
RGP02-15E-E3/73
RGP02-15E-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.5KV 500MA DO204
BY251GPHE3/54
BY251GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO201AD
SS12L RTG
SS12L RTG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A SUB SMA
MBRF1660 C0G
MBRF1660 C0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 16A ITO220AC

Related Product By Brand

ESDA7P60-1U1M
ESDA7P60-1U1M
STMicroelectronics
TVS DIODE 5VWM 11.6VC 1610
ITA6V5C1RL
ITA6V5C1RL
STMicroelectronics
TVS DIODE 5VWM 12VC 8-SO
DSL04-008SC6
DSL04-008SC6
STMicroelectronics
TVS DIODE 8VWM 25VC SOT23-6
STP11NM60N
STP11NM60N
STMicroelectronics
MOSFET N-CH 600V 10A TO220AB
STGWA40M120DF3
STGWA40M120DF3
STMicroelectronics
IGBT 1200V 80A 468W TO-247-3
STSPIN32F0252TR
STSPIN32F0252TR
STMicroelectronics
250 V THREE-PHASE CONTROLLER WIT
STM32L081CBT6
STM32L081CBT6
STMicroelectronics
IC MCU 32BIT 128KB FLASH 48LQFP
STM32F101V8T6
STM32F101V8T6
STMicroelectronics
IC MCU 32BIT 64KB FLASH 100LQFP
TDA7850H
TDA7850H
STMicroelectronics
IC AMP AB QUAD 85W 25FLEXIWATT
74V2G32STR
74V2G32STR
STMicroelectronics
IC GATE OR 2CH 2-INP SOT23-8
M93C56-RMN6P
M93C56-RMN6P
STMicroelectronics
IC EEPROM 2KBIT SPI 1MHZ 8SO
TS3431BILT
TS3431BILT
STMicroelectronics
IC VREF SHUNT ADJ 0.5% SOT23-3