STPSC4H065DI
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STMicroelectronics STPSC4H065DI

Manufacturer No:
STPSC4H065DI
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STPSC4H065DI Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 650V 4A TO220AC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max):650 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.75 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:40 µA @ 650 V
Capacitance @ Vr, F:- 
Mounting Type:Through Hole
Package / Case:TO-220-2 Insulated, TO-220AC
Supplier Device Package:TO-220AC ins
Operating Temperature - Junction:-40°C ~ 175°C
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Similar Products

Part Number STPSC4H065DI STPSC6H065DI   STPSC8H065DI   STPSC4H065D  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
Diode Type Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 650 V 650 V 650 V 650 V
Current - Average Rectified (Io) 4A 6A 8A 4A
Voltage - Forward (Vf) (Max) @ If 1.75 V @ 4 A 1.75 V @ 6 A 1.75 V @ 8 A 1.75 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) - - - 0 ns
Current - Reverse Leakage @ Vr 40 µA @ 650 V 60 µA @ 650 V 80 µA @ 650 V 40 µA @ 650 V
Capacitance @ Vr, F - - - 200pF @ 0V, 1MHz
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2 Insulated, TO-220AC TO-220-2
Supplier Device Package TO-220AC ins TO-220AC ins TO-220AC ins TO-220AC
Operating Temperature - Junction -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C

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