STPS30H100DJF-TR
  • Share:

STMicroelectronics STPS30H100DJF-TR

Manufacturer No:
STPS30H100DJF-TR
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Datasheet:
STPS30H100DJF-TR Datasheet
ECAD Model:
-
Description:
DIODE SCHOTTKY 100V 30A POWRFLAT
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):30A
Voltage - Forward (Vf) (Max) @ If:840 mV @ 30 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:6 µA @ 100 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PowerFlat™ (5x6)
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$1.39
359

Please send RFQ , we will respond immediately.

Similar Products

Part Number STPS30H100DJF-TR STPS30M100DJF-TR  
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
Diode Type Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 100 V 100 V
Current - Average Rectified (Io) 30A 30A
Voltage - Forward (Vf) (Max) @ If 840 mV @ 30 A 960 mV @ 30 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 6 µA @ 100 V 100 µA @ 100 V
Capacitance @ Vr, F - -
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerVDFN 8-PowerVDFN
Supplier Device Package PowerFlat™ (5x6) PowerFlat™ (5x6)
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

NTE6054
NTE6054
NTE Electronics, Inc
R-200 PRV 70A CATH CASE
VS-1N1188
VS-1N1188
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 35A DO203AB
MBR10100G
MBR10100G
onsemi
DIODE SCHOTTKY 100V 10A TO220-2
STTH1210D
STTH1210D
STMicroelectronics
DIODE GEN PURP 1KV 12A TO220AC
SE10PBHM3/85A
SE10PBHM3/85A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO220AA
V10PM12HM3_A/I
V10PM12HM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 120V 3.9A TO277A
UGF8BTHE3_A/P
UGF8BTHE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A ITO220AC
JANS1N3595-1
JANS1N3595-1
Microchip Technology
DIODE GEN PURP 125V 200MA DO35
SM518-CT
SM518-CT
Diotec Semiconductor
CUT-TAPE VERSION. STANDARD RECO
VS-6TQ040SPBF
VS-6TQ040SPBF
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 40V 6A D2PAK
ES1C R3G
ES1C R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 1A DO214AC
UGF12JD C0G
UGF12JD C0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 12A ITO220AC

Related Product By Brand

DALC208SC6Y
DALC208SC6Y
STMicroelectronics
TVS DIODE 9VWM SOT23-6
X-NUCLEO-SRC1M1
X-NUCLEO-SRC1M1
STMicroelectronics
NUCLEO TCPP02-M18 USB TYPE-C PD
STTH3L06RL
STTH3L06RL
STMicroelectronics
DIODE GEN PURP 600V 3A DO201AD
Z0402MF 1AA2
Z0402MF 1AA2
STMicroelectronics
TRIAC SENS GATE 600V 4A TO202
STB4NK60ZT4
STB4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A D2PAK
STD7LN80K5
STD7LN80K5
STMicroelectronics
MOSFET N-CH 800V 5A DPAK
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STB42N60M2-EP
STB42N60M2-EP
STMicroelectronics
MOSFET N-CH 600V 34A D2PAK
TSV712IQ2T
TSV712IQ2T
STMicroelectronics
IC CMOS 2 CIRCUIT 8DFN
M74HC595YRM13TR
M74HC595YRM13TR
STMicroelectronics
IC SHIFT REG LATCH 8BIT 16SOIC
E-L6561D
E-L6561D
STMicroelectronics
IC PFC CTRLR TRANSITION 8SO
LD29300V18
LD29300V18
STMicroelectronics
IC REG LINEAR 1.8V 3A TO220AB