STP9N60M2
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STMicroelectronics STP9N60M2

Manufacturer No:
STP9N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STP9N60M2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 5.5A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:780mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:320 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP9N60M2 STP9N65M2   STP6N60M2   STP7N60M2  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc) 5A (Tc) 4.5A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 780mOhm @ 3A, 10V 900mOhm @ 2.5A, 10V 1.2Ohm @ 2.25A, 10V 950mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 10 V 10 nC @ 10 V 8 nC @ 10 V 8.8 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 320 pF @ 100 V 315 pF @ 100 V 232 pF @ 100 V 271 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 60W (Tc) 60W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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