STP5NK80Z
  • Share:

STMicroelectronics STP5NK80Z

Manufacturer No:
STP5NK80Z
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STP5NK80Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 4.3A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4Ohm @ 2.15A, 10V
Vgs(th) (Max) @ Id:4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:45.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:910 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.36
49

Please send RFQ , we will respond immediately.

Similar Products

Part Number STP5NK80Z STP7NK80Z   STP5NK90Z   STP8NK80Z   STP3NK80Z   STP4NK80Z   STP5NK40Z   STP5NK50Z   STP5NK60Z  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Obsolete Active Active Active Obsolete Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 900 V 800 V 800 V 800 V 400 V 500 V 600 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc) 5.2A (Tc) 4.5A (Tc) 6.2A (Tc) 2.5A (Tc) 3A (Tc) 3A (Tc) 4.4A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 2.15A, 10V 1.8Ohm @ 2.6A, 10V 2.5Ohm @ 2.25A, 10V 1.5Ohm @ 3.1A, 10V 4.5Ohm @ 1.25A, 10V 3.5Ohm @ 1.5A, 10V 1.8Ohm @ 1.5A, 10V 1.5Ohm @ 2.2A, 10V 1.6Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 100µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 45.5 nC @ 10 V 56 nC @ 10 V 41.5 nC @ 10 V 46 nC @ 10 V 19 nC @ 10 V 22.5 nC @ 10 V 17 nC @ 10 V 28 nC @ 10 V 34 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 910 pF @ 25 V 1138 pF @ 25 V 1160 pF @ 25 V 1320 pF @ 25 V 485 pF @ 25 V 575 pF @ 25 V 305 pF @ 25 V 535 pF @ 25 V 690 pF @ 25 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 110W (Tc) 125W (Tc) 125W (Tc) 140W (Tc) 70W (Tc) 80W (Tc) 45W (Tc) 70W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

IRF6717MTRPBF
IRF6717MTRPBF
Infineon Technologies
MOSFET N-CH 25V 38A DIRECTFET
SQ2310ES-T1_GE3
SQ2310ES-T1_GE3
Vishay Siliconix
MOSFET N-CH 20V 6A TO236
SIA485DJ-T1-GE3
SIA485DJ-T1-GE3
Vishay Siliconix
MOSFET P-CH 150V 1.6A PPAK SC70
IPP076N12N3GXKSA1
IPP076N12N3GXKSA1
Infineon Technologies
MOSFET N-CH 120V 100A TO220-3
2N7002/S711215
2N7002/S711215
NXP USA Inc.
N-CHANNEL SMALL SIGNAL MOSFET
SQJ420EP-T1_BE3
SQJ420EP-T1_BE3
Vishay Siliconix
N-CHANNEL 40-V (D-S) 175C MOSFET
STD155N3LH6
STD155N3LH6
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
AOT2142L
AOT2142L
Alpha & Omega Semiconductor Inc.
MOSFET N-CHANNEL 40V 120A TO220
64-4092PBF
64-4092PBF
Infineon Technologies
MOSFET N-CH 55V 28A I-PAK
IXTC102N20T
IXTC102N20T
IXYS
MOSFET N-CH 200V ISOPLUS220
IXFT12N100F
IXFT12N100F
IXYS
MOSFET N-CH 1000V 12A TO268
BUK951R6-30E,127
BUK951R6-30E,127
NXP USA Inc.
MOSFET N-CH 30V 120A TO220AB

Related Product By Brand

BTW67-200
BTW67-200
STMicroelectronics
SCR 200V 50A RD91
T630-600W
T630-600W
STMicroelectronics
TRIAC ALTERNISTOR 600V ISOWATT
ST3222EBDR
ST3222EBDR
STMicroelectronics
IC TRANSCEIVER FULL 2/2 16SO
E-TDA7560
E-TDA7560
STMicroelectronics
IC AMP AB QUAD 80W 25FLEXIWATT
STPA003CD-48X
STPA003CD-48X
STMicroelectronics
IC AMP AB QUAD 85W 27FLEXIWATT
M48Z58Y-70PC1
M48Z58Y-70PC1
STMicroelectronics
IC NVSRAM 64KBIT PAR 28PCDIP
NAND512W3A2BZA6E
NAND512W3A2BZA6E
STMicroelectronics
IC FLSH 512MBIT PARALLEL 63VFBGA
L6384
L6384
STMicroelectronics
IC GATE DRVR HALF-BRIDG 8MINIDIP
ST1S03PUR
ST1S03PUR
STMicroelectronics
IC REG BUCK ADJUSTABLE 1.5A 6DFN
LE50ABZ-AP
LE50ABZ-AP
STMicroelectronics
IC REG LINEAR 5V 100MA TO92-3
BALF-SPI2-01D3
BALF-SPI2-01D3
STMicroelectronics
BALUN 868MHZ-928MHZ 50/50 6UFBGA
SPWF01SA.21
SPWF01SA.21
STMicroelectronics
RX TXRX MODULE WIFI CHIP SMD