STP4NB100
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STMicroelectronics STP4NB100

Manufacturer No:
STP4NB100
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STP4NB100 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 1000V 3.8A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:3.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP4NB100 STP3NB100  
Manufacturer STMicroelectronics STMicroelectronics
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 3.8A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.4Ohm @ 2A, 10V 6Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 30 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 25 V 700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 125W (Tc) 100W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
Package / Case TO-220-3 TO-220-3

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