STP4N80K5
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STMicroelectronics STP4N80K5

Manufacturer No:
STP4N80K5
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STP4N80K5 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 3A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:175 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP4N80K5 STP5N80K5   STP4N90K5   STP7N80K5   STP6N80K5   STP2N80K5   STP3N80K5   STP4LN80K5  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 900 V 800 V 800 V 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 4A (Tc) 3A (Tc) 6A (Tc) 4.5A (Tc) 2A (Tc) 2.5A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.5A, 10V 1.75Ohm @ 2A, 10V 2.1Ohm @ 1A, 10V 1.2Ohm @ 3A, 10V 1.6Ohm @ 2A, 10V 4.5Ohm @ 1A, 10V 3.5Ohm @ 1A, 10V 2.6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V 5 nC @ 10 V 5.3 nC @ 10 V 13.4 nC @ 10 V 7.5 nC @ 10 V 3 nC @ 10 V 9.5 nC @ 10 V 3.7 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V 30V 30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 100 V 177 pF @ 100 V 173 pF @ 100 V 360 pF @ 100 V 255 pF @ 100 V 95 pF @ 100 V 130 pF @ 100 V 122 pF @ 100 V
FET Feature - - - - - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 60W (Tc) 110W (Tc) 85W (Tc) 45W (Tc) 60W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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