STP27N60M2-EP
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STMicroelectronics STP27N60M2-EP

Manufacturer No:
STP27N60M2-EP
Manufacturer:
STMicroelectronics
Package:
Tube
Datasheet:
STP27N60M2-EP Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 20A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:163mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1320 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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$2.91
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Similar Products

Part Number STP27N60M2-EP STP20N60M2-EP   STP25N60M2-EP  
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 13A (Tc) 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 163mOhm @ 10A, 10V - 188mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA - 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V - 29 nC @ 10 V
Vgs (Max) ±25V - ±25V
Input Capacitance (Ciss) (Max) @ Vds 1320 pF @ 100 V - 1090 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 170W (Tc) 110W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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